(159.21 k) 59.21十一 power mosfet(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率mosfet(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.07ohm,身份证\u003d 17A条) 55V,17A,n-channel hexfet power mosfet(55V,17A,N沟道 hexfet功率MOS场效应管) 55V的,17A条,N沟道hexfet功率mosfet5V的,17A条,沟道的hexfet功率马鞍山场效应管) 55V Single n-channel hexfet power mosfet in a D2-Pak package 55V Single n-channel hexfet power mosfet in a TO-262 package
hexfet power mosfet hexfet功率mosfet hexfet power mosfet(110.86 k) 55V Single n-channel hexfet power mosfet in a I-Pak package 55V Single n-channel hexfet power mosfet in a D-Pak package
hexfet power mosfet hexfet功率mosfet hexfet® power mosfet 55V Single n-channel hexfet power mosfet in a D-Pak package 55V Single n-channel hexfet power mosfet in a I-Pak package
75V Single n-channel hexfet power mosfet in a TO-262 package 20V Single n-channel hexfet power mosfet in a D-Pak package x4的SRAM 80V Single n-channel hexfet power mosfet in a D-Pak package x4的SRAM 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM x4 SRAM x4的SRAM
AUTOMOTIVE mosfet 汽车mosfet 75V Single n-channel hexfet power mosfet in a TO-220AB package 75V Single n-channel hexfet power mosfet in a D2-Pak package 75V Single n-channel hexfet power mosfet in a TO-262 package
400V Single n-channel hexfet power mosfet in a TO-262 package 400V Single n-channel hexfet power mosfet in a D2-Pak package hexfet? power mosfet SMPS mosfet
power mosfet(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A) 功率mosfet(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.28ohm,身份证\u003d- 8.8A hexfet? power mosfet -60V Single P-Channel hexfet power mosfet in a D-Pak package -60V Single P-Channel hexfet power mosfet in a I-Pak package
-100V Single P-Channel hexfet power mosfet in a I-Pak package -100V Single P-Channel hexfet power mosfet in a D-Pak package power mosfet(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) hexfet? power mosfet
100V Single n-channel Automotive hexfet power mosfet in a I-Pak package AUTOMOTIVE mosfet Specifically designed for Automotive applications, this hexfet power mosfet utilizes the latest processing techniques to achieve extremely low on-resi