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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
AN3100
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| OCR Text |
...ifferent device technologies: * indium Gallium Phosphide Heterostructure Bipolar Transistors (InGaP HBT) * GaAs Heterostructure Field Effect Transistor (HFET) The required biasing methods for the different circuit schemes are described in t... |
| Description |
General Purpose Amplifier Biasing
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| File Size |
60.19K /
4 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPDA200V
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| OCR Text |
... an Aluminum Gallium Arsenide / indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate stru... |
| Description |
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
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| File Size |
57.15K /
3 Page |
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it Online |
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PICKER[Picker Components]
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| Part No. |
PC617 PC6172C-12C PC6172C-12CC PC6172C-12CT PC6172C-12S PC6172C-12SC PC6172C-12ST PC6172A-12C PC6172A-12CC PC6172A-12CT PC6172A-12S PC6172A-12SC PC6172A-12ST PC6172W-12ST PC6172B-12C PC6172B-12CC PC6172B-12CT PC6172B-12S PC6172B-12SC PC6172B-12ST PC6172U-12C PC6172U-12CC PC6172U-12CT PC6172U-12S PC6172U-12SC PC6172U-12ST PC6172V-12C PC6172V-12CC PC6172V-12CT PC6172V-12S PC6172V-12SC PC6172V-12ST PC6172W-12C PC6172W-12CC PC6172W-12CT PC6172W-12S PC6172W-12SC PC617-2C-12CT PC617-2B-6CT PC617-2U-6CT
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| OCR Text |
...5%), AgSnOInO (Silver Tin Oxide indium Oxide) 100 milliohms max @ 0.1A, 6VDC 1 X 10 7 1 X 10 5 Operations Operations
CHARACTERISTICS
Operate Time Release Time Insulation Resistance Dielectric Strength Shock Resistance Vibration Resistan... |
| Description |
POWER/SIGNAL RELAY, DPST, MOMENTARY, 0.083A (COIL), 6VDC (COIL), 498mW (COIL), PCB MOUNT-STRAIGHT
POWER/SIGNAL RELAY, DPDT, MOMENTARY, 0.041A (COIL), 12VDC (COIL), 492mW (COIL), PCB MOUNT-STRAIGHT
Automotive Twin PCB Power Relay
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| File Size |
231.08K /
2 Page |
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it Online |
Download Datasheet |
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International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
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| Part No. |
GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU-R2
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| OCR Text |
...chip-type LEDs utilize Aluminum indium Gallium Phosphide (AlInGaP) material technology. The AlInGaP material has a very high luminous efficiency, capable of producing high light output over a wide range of drive currents. The available colo... |
| Description |
These chip-type LEDs utilize Aluminum indium Gallium Phosphide (AlInGaP) material technology. 这些芯片型LED的利用铝铟镓磷化物（磷化铝铟镓）材料技术
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| File Size |
98.49K /
4 Page |
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it Online |
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Price and Availability
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