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P4KE100 PMB8787 1212E MDA202G RS2004M 78M20 2SC5125 3253TM
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    FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3

INTERSIL[Intersil Corporation]
Part No. FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3
OCR Text ...S Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Even...
Description 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 59.37K  /  9 Page

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    FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3

INTERSIL[Intersil Corporation]
Part No. FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3
OCR Text ...S Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (Typ), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Ga...
Description 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

File Size 45.96K  /  8 Page

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    FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547

INTERSIL[Intersil Corporation]
Part No. FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547
OCR Text ...S Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Even...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

File Size 48.81K  /  8 Page

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    FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text ...S Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Even...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 60.40K  /  8 Page

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    M14128 D10 D22 ST1331 ST1336 ST14C02C C20 C30 D15 D20 M14256 M14C04 M14C16 M14C32 M14C64 M35101 M35102 ST1200 ST1305B ST

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. M14128 D10 D22 ST1331 ST1336 ST14C02C C20 C30 D15 D20 M14256 M14C04 M14C16 M14C32 M14C64 M35101 M35102 ST1200 ST1305B ST1333 ST1335
OCR Text ...ng Note: 1. Test 3 and 4 are conducted in accordance with MIL-STD-833. 4/13 MICROMODULES RELIABILITY Product qualification and on-going reliability monitoring is performed by ST. The principal steps are listed in Table 8 and Table...
Description Memory Card IC 256/128 Kbit Serial IC Bus EEPROM
Memory Micromodules General Information for D1/ D2 and C Packaging
Memory Micromodules General Information for D1, D2 and C Packaging
Memory Micromodules General Information for D1 D2 and C Packaging

File Size 276.09K  /  13 Page

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    STIL02-P5 9060

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STIL02-P5 9060
OCR Text ...nput current is sinusoidal, the conducted power losses can be calculated by using the following formula: 2 P = VT 0 . I out ( av ) + R d (I out ( av ) x ) 8 If the output average current is 2Amps, VT0 and Rd of the electrical c...
Description AC INRUSH CURRENT LIMITER
AC inrush current limiter
From old datasheet system

File Size 59.87K  /  7 Page

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    KESRX04 KESRX04IG KESRX04QP1S KESRX04QP1T

ZARLINK[Zarlink Semiconductor Inc]
Part No. KESRX04 KESRX04IG KESRX04QP1S KESRX04QP1T
OCR Text ...ge High Data output Voltage Low conducted emissions ts3 1.0 3.0 mS Vin(max) ts2 0.5 2.23 2.0 4.0 Vrms mS 20kB/s data rate at 470MHz. (2) All. Circuit as Figure 11 (5) Local Oscillator low side Injection 423.33 MHz. All. Circuit as Figure 11...
Description 260 to 470MHz. ASK Receiver with Power Down

File Size 492.75K  /  21 Page

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