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For benchmark Found Datasheets File :: 1190 Search Time::0.875ms
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				IRF[International Rectifier]
Part No.	IRGIB10B60KD1 IRGIB10B60KD1P IRGIB10B60KD1PBF
OCR Text	...c > 10s, TJ=150C Benefits * benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.7V Absolute Maximum Ratings Parameter...
Description	600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	383.42K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STW20NC50 7201
OCR Text	...ALANCHE TESTED NEW HIGH VOLTAGE benchmark GATE CHARGE MINIMIZED 2 1 3 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of ...
Description	N-CHANNEL 500V - 0.22 OHM 18.4A TO-247 POWERMESH II MOSFET N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 500V - 0.22 OHM 18.4A TO-247 POWERMESH II MOSFET N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh?II MOSFET
File Size	248.29K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	20MT120UF
OCR Text	...gged with UltraFast Performance benchmark Efficiency above 20KHz Outstanding ZVS and Hard Switching Operation Low EMI, requires Less Snubbing Excellent Current Sharing in Parallel Operation Direct Mounting to Heatsink PCB Solderable Termina...
Description	FULL-BRIDGE IGBT MTP UltraFast NPT IGBT
File Size	77.45K / 3 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADSP-21267 21267
OCR Text	...-21267 benchmarks (at 150 MHz) benchmark Algorithm 1024 Point Complex FFT (Radix 4, with reversal) FIR Filter (per tap)1 IIR Filter (per biquad)1 Matrix Multiply (pipelined) [3x3] x [3x1] [4x4] x [4x1] Divide (y/x) Inverse Square Root 1 ...
Description	Cost-Effective 32-Bit Floating-Point SHARC Processor for Consumer Audio From old datasheet system
File Size	440.09K / 44 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PSC71UD
OCR Text	...ridge configurations * Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 * Creepage distance increased to 5.35mm C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1....
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
File Size	249.88K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PSC71U
OCR Text	...an prior generations * Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 * Creepage distance increased to 5.35mm C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.6...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
File Size	142.75K / 8 Page	View it Online	Download Datasheet

				Motorola
Part No.	MPC8260ED MPC8260EC
OCR Text	...igh-performance (4.4-5.1 SPEC95 benchmark at 200 MHz; 280 Dhrystones MIPS at 200 MHz) -- Supports bus snooping for data cache coherency -- Floating-point unit (FPU) Separate power supply for internal logic and for I/O The major features ...
Description	Hardware Specifications From old datasheet system
File Size	275.37K / 36 Page	View it Online	Download Datasheet

				Atmel corp
Part No.	PC8260NBSP PC8260
OCR Text	...ore performance for the SPEC 95 benchmark for integer operations ranges between 4.4 and 5.1 at 200 MHz. In Dhrystone 2.1 MIPS, the EC603e is 280 MIPS at 200 MHz (compared to 86 MIPS of the PC860 at 66 MHz). The EC603e core can be disabled. ...
Description	The versatile PC8260 PowerQUICC II is particularly useful in communication and networking applicatio From old datasheet system
File Size	283.76K / 53 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD
OCR Text	...on Carbide * Switching behavior benchmark * No reverse recovery * No temperature influence on the switching behavior * Ideal diode for Power Factor Correction up to 1200W 1) * No forward recovery P-TO220-2-2. thinQ! SiC Schottky Diode ...
Description	Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package 600V Silicon Carbide Ultrafast Schottky Diode Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package Silicon Carbide Schottky Diodes - 6A diode in TO263 package
File Size	257.23K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4IBC20W
OCR Text	...insulation voltage V * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and construction offers tighter para...
Description	600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR
File Size	152.11K / 8 Page	View it Online	Download Datasheet

For benchmark Found Datasheets File :: 1190 Search Time::0.875ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |