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900v Datasheet PDF File

For 900v Found Datasheets File :: 1612 Search Time::1.375ms
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				Microsemi Corporation
Part No.	APTC90TAM60TPG
OCR Text	900v RDSon = 60m max @ Tj = 25C ID = 59A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate cha...
Description	Triple phase leg Super Junction MOSFET Power Module
File Size	226.51K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd.
Part No.	APTGT300DA170
OCR Text	...g (25c) v ge = 15v v bus = 900v i c = 300a r g = 2.2 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time 300 ns e on turn-on switching en...
Description	Boost chopper Trench Field Stop IGBT Power Module 升压斩波器沟槽场站IGBT功率模块
File Size	265.81K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTC90TDUM60TPG
OCR Text	900v RDSon = 60m max @ Tj = 25C ID = 59A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche ...
Description	Triple dual Common Source Super Junction MOSFET Power Module
File Size	220.92K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics N.V.
Part No.	DIM150CHS17-E
OCR Text	... 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward cur...
Description	IGBT Modules - Half Bridge IGBT模块-半桥
File Size	145.74K / 8 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2769-01MR
OCR Text	...che Rated N-channel MOS-FET 900v 5,5 3,5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Rating...
Description	N-channel MOS-FET
File Size	279.53K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSF7N90A
OCR Text	900v * * * * * * * Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25A (Max.) @ VDS = 900v Lower RDS(ON): 1.247 (Typ.) 1 2 3 RDS(O...
Description	N-CHANNEL POWER MOSFET
File Size	244.62K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN
OCR Text	900v 1000V 900v 9.5A 9.5A 8.5A 8.5A W 1.10W W 1.10W W 1.30W W 1.30W POWER MOS IVTM N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TS...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
File Size	60.52K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4631LS
OCR Text	900v / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * Package Dimensions unit : mm 2079D [2SC4631LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900v). Small Cob(typical Cob=5.0pF). Full-i...
Description	NPN Triple Diffused Planar Silicon Transistor 900v / 300mA High-Voltage Amplifier, High-Voltage Switching Applications 900v/300mA High-Voltage Amplifier,High-Voltage Switching Applications
File Size	28.26K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PF50W
OCR Text	...tional reliability C VCES = 900v G E VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A n-channel Benefits * Lower switching losses allow more cost-effective operation and hence efficient replacement of largerdie MOSFETs up to 100kHz...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	125.36K / 8 Page	View it Online	Download Datasheet

				Eupec
Part No.	BSM200GB170DLC
OCR Text	...nductive load) IC = 200A, VCE = 900v VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 900v VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj =...
Description	IC,BUFFER/DRIVER,DUAL,4-BIT,HC-CMOS,SOP,20PIN,PLASTIC
File Size	140.19K / 8 Page	View it Online	Download Datasheet

For 900v Found Datasheets File :: 1612 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |