...to 2SD1250 and 2SD1250A
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
10.00.3
1.50.1
10.5min.
q q q
High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin ...
Description
Silicon PNP epitaxial planar type(For power amplification)
6.00.5 3.40.3
Unit: mm
1.00.1
For power amplification Complementary to 2SD1252 and 2SD1252A
s Features
q q q
High forward curr...8.50.2 6.00.3
emitter voltage 2SB929A Emitter to base voltage Peak collector current Collector cu...
Description
Silicon PNP epitaxial planar type(For power amplification)
6.00.5 3.40.3
Unit: mm
1.00.1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward curr...8 -4 40 1.3 150 -55 to +150 Unit V 2SB930 2SB930A 2SB930
Collector to base voltage Collector to
...
Description
Silicon PNP epitaxial planar type(For power amplification)
6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type p...8.50.2 6.00.3
emitter voltage 2SB935A Emitter to base voltage Peak collector current Collector cu...
6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type p...8.50.2 6.00.3
emitter voltage 2SB936A Emitter to base voltage Peak collector current Collector cu...
...2 and 2SD1262A
10.00.3
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board...
...tg Ratings -200 -200 -150 -180 -6 -3 -2 30 2 150 -55 to +150 Unit V 2SB940 2SB940A 2SB940
Collector to base voltage Collector to
emitt...8 -10 -12 0 0
2SB940, 2SB940A
IC -- VCE
-2.0 VCE=-10V
IC -- VBE
Collector power dissipati...
Description
Silicon PNP epitaxial planar type(For power amplification)
...ower Transistors
PC -- Ta
50 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat s...8
30
-60mA
-6
25C TC=100C -25C
-3
(1) 20
-40mA -20mA -10mA
-4
-2
10 (3...
Description
Silicon PNP epitaxial planar type(For low-frequency power amplification)
...1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V
Forward current transfer ratio Collector to em...8 -80mA
2SB947, 2SB947A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-10
...
... A A V
-20 -40 45 90 260 - 0.6 -1.5 100 400 0.1 0.5 0.1
Forward current transfer ratio Collector to emitter saturation voltage Base to...8 -10 -12 TC=25C
2SB948, 2SB948A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)...