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Diodes, Inc. DIODES[Diodes Incorporated] Diodes Inc.
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Part No. |
2A07G 2A01G 2A02G 2A03G 2A04G 2A05G 2A06G
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OCR Text |
...WARD SURGE CURRENT (A)
60
45
Cj, CAPACITANCE (pF)
10
30
15
8.3ms Single half sine-wave JEDEC Method
0 1 10
Tj = 25C f = 1 MHz
100
1.0
1.0
NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surg... |
Description |
2.0A GLASS PASSIVATED RECTIFIER FAN, GALAXY, 127X38MM, 24V; Series:Galaxy; Flow rate:150cu.ft/min; Flow rate, imperial:150cu.ft/min; Length / Height, external:127mm; Width, external 2.0A GLASS PASSIVATED RECTIFIER 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
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File Size |
57.71K /
2 Page |
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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Part No. |
APT20M26WVR
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OCR Text |
...1
TO-267 Package Outline
20.45 (.805) 20.20 (.795) 10.23 (.403) 10.10 (.398)
1.80 (.071) 1.25 (.049)
4.19 (.165) 3.95 (.156) 24.15 (.951) 23.60 (.929) 16.90 (.665) 16.40 (.646) 20.32 (.800) 20.07 (.790)
Drain
19.05 (.750) 12.7... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 65A 0.026 Ohm
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File Size |
62.86K /
4 Page |
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ADPOW[Advanced Power Technology]
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Part No. |
APT60M80L2VFR
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OCR Text |
...0 40 50 60 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
Typical Performance Curves
APT60M80L2VFR
10%
Gate Voltage 90% TJ125C Gate Voltage TJ125C
td(on)
Drain Curre... |
Description |
POWER MOS V FREDFET
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File Size |
159.70K /
5 Page |
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ADPOW[Advanced Power Technology]
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Part No. |
APT60M80L2VR_04 APT60M80L2VR APT60M80L2VR04
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OCR Text |
...0 40 50 60 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
Typical Performance Curves
APT60M80L2VR
10%
Gate Voltage 90% TJ125C Gate Voltage TJ125C
td(on)
Drain Curren... |
Description |
POWER MOS V? MOSFET POWER MOS V㈢ MOSFET
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File Size |
158.94K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APT60M80L2VR
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OCR Text |
....051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
58.92K /
2 Page |
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it Online |
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Price and Availability
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