400v.6 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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400v.6 Datasheet PDF File

For 400v.6 Found Datasheets File :: 13233 Search Time::1.657ms
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				Microsemi Corporation
Part No.	APTGV25H120T3G
OCR Text	...witching (25C) VGE = 15V VBus = 400V IC = 25A RG = 22 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 25A RG = 22 VGE = 15V Tj = 125C ...6 C/W Max Unit pF nC ns ns 2.2 Bottom diode characteristics Symbol Characteristi...
Description	Full - Bridge NPT & Trench Field Stop? IGBT Power module Full - Bridge NPT & Trench Field Stop垄莽 IGBT Power module
File Size	362.88K / 9 Page	View it Online	Download Datasheet

				RFE international
Part No.	LSG101M2G220300
OCR Text	...X Length)mm a Rate Voltage (400V) a Capacitance tolerance (20%) a Capacitance (100F) a Series name RFE International * Tel:(949) 833-1988 * Fax:(949) 833-1788 * E-Mail Sales@rfeinc.com C1CH04 REV 2009.8.3 LSG Series...
Description	ALUMINUM ELECTROLYTIC CAPACITORS LSG Series: Snap-in Terminal Type, 105C
File Size	172.59K / 3 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTDF60H601G
OCR Text	...ery current i f = 60a v r = 400v di/dt = 200a/s t j = 125c 9 a t rr reverse recovery time 80 ns q rr reverse recov...6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal imped...
Description	FRED 50-1700V
File Size	320.49K / 5 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTDF30H601G
OCR Text	...covery time i f = 30a v r = 400v di/dt = 200a/s t j = 25c 25 ns t j = 125c 160 q rr reverse recovery charge t j = 2...6 t rr reverse recovery time i f = 30a v r = 400v di/dt=1000a/s t j = 125c 85 ns q ...
Description	FRED 50-1700V
File Size	317.64K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
Part No.	FGA30N60LSD FGA30N60LSDTU
OCR Text	...C Powe Dissipation = 192W Vcc = 400V load Current : peak of square wave Figure 12. Turn-On Characteristics vs. Gate Resistance 200 10...6.8 TC = 25 C o o Switching Time [ns] 1000 tf Switching Time [ns] TC = 125 C 100 ...
Description	MOSFETs and bipolar transistors IGBT ROHS COMPLIANT, TO-3PN, 3 PIN MOSFETs and bipolar transistors
File Size	766.40K / 9 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTDF100H601G
OCR Text	...ry current i f = 100a v r = 400v di/dt = 200a/s t j = 125c 13 a t rr reverse recovery time 100 ns q rr reverse rec...6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) m...
Description	FRED 50-1700V
File Size	324.49K / 5 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTCV50H60T3G
OCR Text	...very charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w ...6. top switches curves 6.1 top trench + field stop igbt3 typical performance curves output...
Description	IGBT / MOSFET Modules
File Size	438.52K / 10 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGF50A60T1G
OCR Text	...witching (25C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 VGE = 15V Tj = 125...6 400 Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 mJ 1 Max Unit A V V nA Unit pF 1.7...
Description	Phase leg NPT IGBT Power Module
File Size	310.14K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR51H310
OCR Text	...Deadtime RDS(on) PD (TA = 25 C) 400V 50% 1.2s 3.6 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs M...
Description	GT 7C 7#16S PIN PLUG SELF-OSCILLATING HALF-BRIDGE
File Size	146.39K / 6 Page	View it Online	Download Datasheet

For 400v.6 Found Datasheets File :: 13233 Search Time::1.657ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |