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  2m.word Datasheet PDF File

For 2m.word Found Datasheets File :: 1540    Search Time::0.797ms    
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    NEC[NEC]
Part No. UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000ALGX UPD23C32000ALGX-XXX UPD23C32000ALGY-MJH UPD23C32000ALGY-MKH UPD23C32000ALGY-XXX-MJH
OCR Text 2M-WORD BY 16-BIT (WORD MODE) Description The PD23C32000AL is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits). The active level...
Description 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)

File Size 253.22K  /  20 Page

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC3 UPD23C32300F9-XXX-BC3 UPD23C32300GZ-MJH
OCR Text 2M-WORD BY 16-BIT (WORD MODE) Description The PD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits). The active levels ...
Description 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位(字节模式 200万字6位(字模式)
CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位(字节模式 200万字6位(字模式)

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    LH532000B-1

SHARP[Sharp Electrionic Components]
Part No. LH532000B-1
OCR Text ...TION The LH532000B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 x 8 bits (Byte mode) or 131,072 x 16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology. ...
Description CMOS 2M (256K x 8/128K x 16) MROM

File Size 71.42K  /  8 Page

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    LH532000B LH532000BT

Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
Part No. LH532000B LH532000BT
OCR Text ...DESCRIPTION The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology. CMOS 2M (256K x 8/128K x 16) MROM PIN CONNECTIONS...
Description CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP

File Size 67.62K  /  7 Page

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    Analog Integrations, Corp.
Part No. CY7C1423AV18-250BZC
OCR Text ... 36-mbit density (4m 8, 4m 9, 2m 18, 1m 36) 300 mhz clock for high bandwidth 2-word burst for reducing address bus frequency double data rate (ddr) interfaces (data transferred at 600 mhz) at 300 mhz two input clocks (k and k ) f...
Description 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165

File Size 946.37K  /  33 Page

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    Sharp, Corp.
Part No. LRS1329
OCR Text 2m s ram (model no.: lrs1329 ) spec no.: mf m 2 - j 11 60 1 issue date: jun e 1 0 , 19 99 p reliminary p roduct s pecifications ...word/byte write block erase odeep power down current (the current for f-v,, pin) . . ...
Description Stacked Chip 16M Flash and 2M SRAM 1,600闪存芯片堆叠以及2M SRAM

File Size 1,312.48K  /  27 Page

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    NEC[NEC]
Part No. UPD23C32380GZ-XXX-MJH UPD23C32340 UPD23C32340F9-BC3 UPD23C32340F9-XXX-BC3 UPD23C32340GZ-MJH UPD23C32340GZ-XXX-MJH UPD23C32380 UPD23C32380F9-BC3 UPD23C32380F9-XXX-BC3 UPD23C32380GZ-MJH
OCR Text 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The PD23C32340 and PD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by...
Description 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE

File Size 282.93K  /  20 Page

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    LRS1329

Sharp Electrionic Components
Part No. LRS1329
OCR Text 2M SRAM (Model No.: LRS1329) Stacked Chip LRS1329 Spec No.: MFM2-J11601 Issue Date: June 10, 1999 SHARP l LRS1329 Handle...Word/Byte Block erase (The current Architecture Parameter Blocks/ Boot Location for F-V,, pin) for w...
Description Stacked Chip 16M Flash and 2M SRAM

File Size 1,306.97K  /  27 Page

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    Sharp, Corp.
Part No. LRS1342
OCR Text 2m sram features ? flash memory and sram  stacked die chip scale package  72-ball csp (fbga072-p-0811) plastic package  power supply: 2.7...word write: 17 ma ? block erase: 17 ma ? deep power down current (the current for f-v cc pin): 10 ...
Description Stacked Chip 16M Flash Memory and 2M SRAM 堆叠芯片1,600快闪记忆体以2M SRAM

File Size 199.79K  /  24 Page

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    Sharp Corp
Part No. LRS1329
OCR Text 2M SRAM (Model No.: LRS1329) Stacked Chip LRS1329 Spec No.: MFM2-J11601 Issue Date: June 10, 1999 SHARP l LRS1329 Handle...Word/Byte Block erase (The current Architecture Parameter Blocks/ Boot Location for F-V,, pin) for w...
Description MIXED MEMORY,SRAM EEPROM,HYBRID,BGA,72PIN,PLASTIC
From old datasheet system

File Size 1,315.62K  /  28 Page

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