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Sanyo
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| Part No. |
2SA1882 0177
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| OCR Text |
... typ (-)10 (-)120 (-)0.9 max (-)25 (-)240 (-)1.2 Unit mV mV V V V V
VBE(sat) IC=(-)500mA, IB=(-)25mA V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-...fT - MHz 2SA1882 VCE= --2V
f T -- IC
2SC4984 VCE=2V
Gain-Bandwidth Product, fT - MHz
5 3 2... |
| Description |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
47.50K /
5 Page |
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NEC Corp.
NEC[NEC]
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| Part No. |
2SC4186 2SC4186T63 2SC4186T62 2SC4186T64
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| OCR Text |
...IONS
in millimeters 2.1 0.1 1.25 0.1
2.0 0.2 0.3 +0.1 -0
0.65 0.65
mended for Hybrid Integrated Circuit and other applications....fT = 4.0 GHz. : Cob = 1.5 pF MAX. * Low Collector to Base Time Constant : CC * rb'b = 4.0 ps TYP.
... |
| Description |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-323
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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| File Size |
45.78K /
8 Page |
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Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC1384 2SC1383
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| OCR Text |
...2SA684. (Ta=25C)
Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 Unit V
2.540.15
+0.3 +0.2
s Absolute Maximum Ratings
Parameter Collecto...fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = ... |
| Description |
Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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| File Size |
46.40K /
3 Page |
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it Online |
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Philips
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| Part No. |
BFG424W BFG424F
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| OCR Text |
...lutions/multimarket/transistors/25_45ghz_wideband/index.html
Wideband transistors
The fT-IC curve represents Transition Frequency (fT) characteristics as a function of collector current (IC) for the six generations of RF wideband tran... |
| Description |
(BFGxxx) RF Bipolar Transistors
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| File Size |
107.85K /
2 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
BD241C BD242B ON0192 BD242C BD241B
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| OCR Text |
...Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 0.32 Watts W/_C TJ, Tstg - 65 ...fT = |hfe| * ftest.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHAR... |
| Description |
POWER TRANSISTORS COMPLEMENTARY SILICON
From old datasheet system
CASE 221A-09 TO-220AB
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| File Size |
106.37K /
6 Page |
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Quanzhou Jinmei Electro...
Philips
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| Part No. |
BFG520XR BFG520X BFG520XR_CNV_3 BFG520/XR BFG520XR-2015
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| OCR Text |
...e 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 9...fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance... |
| Description |
NPN 9 GHz wideband transistor
From old datasheet system
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| File Size |
113.45K /
13 Page |
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it Online |
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