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  100v 7a Datasheet PDF File

For 100v 7a Found Datasheets File :: 963    Search Time::1.109ms    
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    IRFD9110 FN2215

Intersil Corporation
Part No. IRFD9110 FN2215
OCR Text 100v, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOS...7a, 100v * rDS(ON) = 1.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited ...
Description 0.7a, 100v, 1.200 Ohm, P-Channel Power MOSFET
From old datasheet system

File Size 53.95K  /  6 Page

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    STB15NM60N

STMicroelectronics
Part No. STB15NM60N
OCR Text ... =14a, di/dt =100a/s, v dd = 100v, tj = 25c (see figure 19) 390 5 25 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current v dd = 100v di/dt =100a/s, i sd = 14a tj = 150c (see figure 19) 500 7 ...
Description N-channel Power MOSFET

File Size 632.02K  /  18 Page

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    IRHF67230 IRHF63230

International Rectifier
Part No. IRHF67230 IRHF63230
OCR Text ...source charge ? ? 12 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 30 t d (on) turn-on delay time ? ? 17 v dd = 100v, i d = 9.1...7a v sd diode forward voltage ? 1.2 v v gs = 0v, i d =...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 201.32K  /  9 Page

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    SMA5.1701 SMA5117

Sanken electric
Part No. SMA5.1701 SMA5117
OCR Text ...20 ns i d =3.5a, t r 25 ns v dd 100v, td (off) 90 ns r l =28.6 ? , v gs =10v, t f 70 ns see fig. 3 on page 16. v sd 1.1 1.5 v i sd =7a, v gs =0v t rr 85 ns i sd =3.5a, v gs =0v, di/dt=100a/ s specification min typ max 2 3 4 8 7 5 6 9 10 ...
Description 3-phase Motor Driver Array
N-channel 3-phase DC motor 100v AC direct drive

File Size 30.95K  /  1 Page

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    STW15NM60N

STMicroelectronics
Part No. STW15NM60N
OCR Text ... =14a, di/dt =100a/s, v dd = 100v, tj = 25c (see figure 19) 390 5 25 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current v dd = 100v di/dt =100a/s, i sd = 14a tj = 150c (see figure 19) 500 7 ...
Description N-channel Power MOSFET

File Size 632.01K  /  18 Page

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    STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF15NM60N STW15NM60N

STMicroelectronics
Part No. STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF15NM60N STW15NM60N
OCR Text ... ISD =14A, di/dt =100A/s, VDD = 100v, Tj = 25C (see Figure 19) VDD = 100v di/dt =100A/s, ISD = 14A Tj = 150C (see Figure 19) 390 5 25 500 7 25 Test conditions Min Typ Max 14 56 1.3 Unit A A V ns C A ns C A 1. Pulse width limited by safe ...
Description N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET

File Size 585.63K  /  18 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD7N60
OCR Text ...e i f =7a,di/dt=100a/ m s,v ds =100v body diode reverse recovery time i f =7a,di/dt=100a/ m s,v ds =100v turn-off delaytime g turn-off fall time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c...
Description 600V,7a N-Channel MOSFET

File Size 435.88K  /  6 Page

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    AOD7N60 AOI7N60

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AOD7N60 AOI7N60
OCR Text ...e i f =7a,di/dt=100a/ m s,v ds =100v body diode reverse recovery time i f =7a,di/dt=100a/ m s,v ds =100v turn-off delaytime g turn-off fall time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c...
Description 600V,7a N-Channel MOSFET

File Size 384.60K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD7S60
OCR Text ...e forward voltage vgs=0v, v ds =100v, f=1mhz v gs =0v, v ds =0v, f=1mhz body diode reverse recovery charge i f =3.5a,di/dt=100a/ m s,v ds =4...7a, v dd =150v, starting t j =25c i. c o(er) is a fixed capacitance that gives the same stored ene...
Description 600V 7a a MOS TM Power Transistor

File Size 541.08K  /  7 Page

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    AOD7N65

Alpha & Omega Semiconductors
Part No. AOD7N65
OCR Text ...e i f =7a,di/dt=100a/ m s,v ds =100v body diode reverse recovery time i f =7a,di/dt=100a/ m s,v ds =100v turn-off delaytime g turn-off fall time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c...
Description 650V,7a N-Channel MOSFET

File Size 385.06K  /  6 Page

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