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  1.8-type Datasheet PDF File

For 1.8-type Found Datasheets File :: 211171    Search Time::5.031ms    
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    2SB968 2SD1295

PANASONIC[Panasonic Semiconductor]
Part No. 2SB968 2SD1295
OCR Text ...omplementary to 2SD1295 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 0.8max q q q Possible to solder the radiation fin directly to pri...8 1.00.2 s Features 7.30.1 1.80.1 Unit A A A V V -50 -40 50 220 -1 -1.5 150 45 ...
Description Silicon PNP epitaxial planar type(For low-frequency output amplification)

File Size 52.65K  /  3 Page

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    2SB970 2SB0970

PANASONIC[Panasonic Semiconductor]
Part No. 2SB970 2SB0970
OCR Text ... -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 1.90.2 0.95 Low collector to emitter saturation voltage VCE(sat). Mini type p...8 130 22 *2 min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 max -100 0.16 -0.06 +0.2...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

File Size 36.21K  /  2 Page

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    2SB976

PANASONIC[Panasonic Semiconductor]
Part No. 2SB976
OCR Text ...55 ~ +150 Unit V V 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC....8 -10 -12 0 0 - 0.4 - 0.8 -10 2SB976 IC -- VCE -12 VCE=-2V IC --VBE Collector power dissi...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

File Size 34.79K  /  2 Page

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    2SC1384 2SC1383

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC1384 2SC1383
OCR Text ...(Ta=25C) Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 Unit V 2.540.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to bas...8.60.2 s Features s Electrical Characteristics Parameter Collector cutoff current Collector t...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 46.40K  /  3 Page

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    2SC3931

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3931
OCR Text 1 s Features q q q 0.425 1.250.1 0.425 Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini ty...8 24 3.3 1 260 V MHz pF dB dB typ max Unit V V *h FE Rank classification Rank hFE Marking ...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)

File Size 55.77K  /  3 Page

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    2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662

ROHM[Rohm]
Part No. 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662
OCR Text ... 2SC3838K / 2SC4043S !Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbb'Cc and high gain. (Typ. 4ps) 3) Small NF. !Exte...8 (2) 0.2 0.4 0.4 0.8 0.5 0.22 0.15Max. ! Absolute maximum ratings (Ta=25C) Parame...
Description High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)

File Size 61.54K  /  2 Page

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    2SC4835

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4835
OCR Text 1 s Features q q q q 0.425 1.250.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, ...8 40 40 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 36.52K  /  2 Page

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    2SC5002

SANKEN[Sanken electric]
Part No. 2SC5002
OCR Text ... 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ Unit A mA A V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 ...8 3.35 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 50 IC (A) 4 VBB1...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)

File Size 23.63K  /  1 Page

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    2SC5003

SANKEN[Sanken electric]
Part No. 2SC5003
OCR Text ...1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Unit A mA mA V Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE...8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 50 IC (A) 4 VBB1 (V) 10 ...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

File Size 24.73K  /  1 Page

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...speed switching Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute M...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

File Size 35.44K  /  2 Page

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For 1.8-type Found Datasheets File :: 211171    Search Time::5.031ms    
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