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panasonic
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| Part No. |
2SC2631
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| OCR Text |
...
Unit: mm
4.00.2
q q q
0.70.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction tem... |
| Description |
TO-92-A1
|
| File Size |
51.26K /
3 Page |
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it Online |
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Torex Semiconductor LTD
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| Part No. |
XC62FP3002PR
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| OCR Text |
...Output voltage: 2.0V to 6.0V in 0. V increments 1 (1. V to 1.9V for custom products) 1 Highly accurate: Output voltage 2% (1% for semi-custom products) Low power consumption: Typ. 2.0A at VOUT = 5.0V Output voltage temperature coefficient: ... |
| Description |
Analog IC - Datasheet Reference
From old datasheet system
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| File Size |
65.42K /
1 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3039
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| OCR Text |
... VCE(sat) VBE(sat) VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8A VCE=5V, IC=4A IC=4A, IB=0.8A IC=4A, IB=0.8A 15* 8 1.0 1.5 V V Conditions Ratings min typ max 10 10 50* Unit A A
* : The hFE1 of the 2SC3039 is classified as follows. When spe... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
97.72K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3144 2SA1258
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| OCR Text |
...
10.2 3.6 5.1 4.5 1.3
2.7 18.0 5.6
1.2 0.8
14.0
15.1
6.3
0.4
1
2
3
( ) : 2SA1258
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-t... |
| Description |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers Applications
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
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| File Size |
42.27K /
4 Page |
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it Online |
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panasonic
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| Part No. |
2SC3311A
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| OCR Text |
...itter 2:Collector 3:Base
1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
(0.8)
0.75 max.
7.6
s Features
(0.8) 3.00.2
NS-B1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to ... |
| Description |
NS-A1
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| File Size |
48.10K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3460
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| OCR Text |
...y. * Fast switching speed (tf : 0.1s typ). * Wide ASO. * Adoption of MBIT process.
Package Dimensions
unit:mm 2022A
[2SC3460]
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emi... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
111.52K /
4 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SC4004
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| OCR Text |
...gh-speed switching
Unit: mm
0.70.1
s Features
q q q q q
4.20.2
10.00.2 5.50.2
4.20.2 2.70.2
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward curr... |
| Description |
Power Transistors
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| File Size |
53.75K /
4 Page |
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hitachi
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| Part No. |
2SC4264
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| OCR Text |
... -- -- -- -- -- -- -- -- Max -- 0.5 10 1.0 0.7 -- 1.5 -- pF GHz Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 11 V, RBE = VEB = 3 V, IC = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
14.58K /
3 Page |
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it Online |
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Sanyo
|
| Part No. |
2SC4453
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| OCR Text |
...ns
unit : mm 2018B
[2SC4453]
0.5
0.4 3 0.16 0 to 0.1
Fast switching speed. Low collector saturation voltage. High gain-bandwidth product. Small collector capacity. Ultrasmall-sized package permitting the 2SC4453applied sets to be mad... |
| Description |
NPN Epitaxial Planar Silicon Transistors
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| File Size |
34.21K /
4 Page |
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it Online |
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Price and Availability
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