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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM3400CX TSM3400
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OCR Text |
30V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 30V RDS (on), Vgs @ 4.5V, Ids @ 2A =70m RDS (on), Vgs @ 10V, Ids @ 3.5A =50m
Features
Rugged and reliable High density cell design for ultra low ... |
Description |
30V N-Channel Enhancement Mode MOSFET
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File Size |
203.92K /
5 Page |
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SENSITRON[Sensitron]
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Part No. |
SHD501603 SHD50101
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OCR Text |
...Conditions TA = 25C 18.5V VIN 30V PD 15W, 5 mA IO 1A 18.5V VIN 30V 17.5V VIN 30V TA = 25C -55C TC + 125C 20V VIN 26V TC = 25C -55C TC + 125C Tj = 25C 5 mA IO 1.5A 250 mA IO 750mA 5 mA IO 1A, -55 TC + 125 C TC = 25C -5... |
Description |
DUAL FIXED +/- 15.0 VOLT 1.5 AMP VOLTAGE REGULATOR
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File Size |
52.54K /
3 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM3401CX TSM3401
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OCR Text |
30V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 30V RDS (on), Vgs @ - 4.5V, Ids @ - 2A =100m RDS (on), Vgs @ - 10V, Ids @ - 3A =75m
Features
Rugged and reliable High density cell design for u... |
Description |
-30v P-Channel Enhancement Mode MOSFET
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File Size |
214.15K /
5 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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Part No. |
TSM4835CS TSM4835
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OCR Text |
30V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain
VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18m RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30m
Features
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Description |
30V P-Channel Enhancement Mode MOSFET
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File Size |
168.81K /
5 Page |
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GE[General Semiconductor]
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Part No. |
UG8GT UG8FT
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OCR Text |
...me at IF=1.0A, di/dt=100A/s, VR=30V, Irr=0.1 IRM Maximum reverse recovery current at IF=10A, di/dt=50A/s,VR=30V Maximum stored charge IF=2A, di/dt=20A/s, VR=30V, Irr=0.1 IRM Typical thermal resistance from junction to case Operating junctio... |
Description |
ULTRAFAST SOFT RECOVERY RECTIFIER
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File Size |
36.98K /
2 Page |
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SamHop Microelectronics
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Part No. |
STT626
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OCR Text |
...switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =4a v ds =10v , i d =4a input capacitance output capacitance dynamic cha... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
132.34K /
8 Page |
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it Online |
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Price and Availability
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