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  -30v Datasheet PDF File

For -30v Found Datasheets File :: 33766    Search Time::1.547ms    
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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM3400CX TSM3400
OCR Text 30V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30V RDS (on), Vgs @ 4.5V, Ids @ 2A =70m RDS (on), Vgs @ 10V, Ids @ 3.5A =50m Features Rugged and reliable High density cell design for ultra low ...
Description 30V N-Channel Enhancement Mode MOSFET

File Size 203.92K  /  5 Page

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    SENSITRON[Sensitron]
Part No. SHD501603 SHD50101
OCR Text ...Conditions TA = 25C 18.5V VIN 30V PD 15W, 5 mA IO 1A 18.5V VIN 30V 17.5V VIN 30V TA = 25C -55C TC + 125C 20V VIN 26V TC = 25C -55C TC + 125C Tj = 25C 5 mA IO 1.5A 250 mA IO 750mA 5 mA IO 1A, -55 TC + 125 C TC = 25C -5...
Description DUAL FIXED +/- 15.0 VOLT 1.5 AMP VOLTAGE REGULATOR

File Size 52.54K  /  3 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM3401CX TSM3401
OCR Text 30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 30V RDS (on), Vgs @ - 4.5V, Ids @ - 2A =100m RDS (on), Vgs @ - 10V, Ids @ - 3A =75m Features Rugged and reliable High density cell design for u...
Description -30v P-Channel Enhancement Mode MOSFET

File Size 214.15K  /  5 Page

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    BSS123N3

Cystech Electonics Corp.
Part No. BSS123N3
OCR Text ....7 - tf - 1.4 - ns v dd =30v, i d =1.7a, v gs =10v, r gen =6 qg - 3.6 - qgs - 1.8 - qgd - 0.6 - nc v dd =30v, i d =1.7a, v gs =10v cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revi...
Description N-CHANNEL MOSFET

File Size 253.18K  /  8 Page

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    SH602

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SH602
OCR Text 30V 24 SH602 ECEOAEAae SMT 1/41/4EoOAE IOa x/AAoa/OAEAE/Ae , AEax/cN* l cOcN 30V 24 II 30V 24 AUO IENc 5.1V O OEyoAAEaEeEIOoEao 10k| l EaEexe 6 E EaEexeI 6 10k| EaEeAoa l /OAEAE/EaEeAAAeAoEI *uEI 20V 8 UoU EaEe 1 2 6A 0.5V E OAAE ...
Description SH602

File Size 89.70K  /  4 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM4835CS TSM4835
OCR Text 30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18m RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30m Features ...
Description 30V P-Channel Enhancement Mode MOSFET

File Size 168.81K  /  5 Page

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    GE[General Semiconductor]
Part No. UG8GT UG8FT
OCR Text ...me at IF=1.0A, di/dt=100A/s, VR=30V, Irr=0.1 IRM Maximum reverse recovery current at IF=10A, di/dt=50A/s,VR=30V Maximum stored charge IF=2A, di/dt=20A/s, VR=30V, Irr=0.1 IRM Typical thermal resistance from junction to case Operating junctio...
Description ULTRAFAST SOFT RECOVERY RECTIFIER

File Size 36.98K  /  2 Page

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    SamHop Microelectronics
Part No. STT626
OCR Text ...switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =4a v ds =10v , i d =4a input capacitance output capacitance dynamic cha...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.34K  /  8 Page

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    2SC3187

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3187
OCR Text ... 30mA IC = 30mA, IB = 3mA VCB = 30V, IE = -20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 70 140 1.9 min 300 300 7 50 250 1.2 1.5 V V MHz pF typ max Unit V V V 1 Transistor PC -- Ta 1.0 120 Ta=25C IB=2.0mA 1.6mA 1.2mA 1.0mA 0.8mA 0.6m...
Description - ContinuousShort Circuit Protection ( /P-Suffix)
Silicon NPN triple diffusion planer type(For small TV video output)

File Size 35.33K  /  2 Page

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    SSG4536C

SeCoS Halbleitertechnologie GmbH
Part No. SSG4536C
OCR Text 30v, r ds(on) 28 m ? p-ch: -6a, -30v, r ds(on) 39 m ? n & p-ch enhancement mode power mosfet elektronische bauelemente 12-sep-2012 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will...
Description N & P-Ch Enhancement Mode Power MOSFET

File Size 120.50K  /  2 Page

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For -30v Found Datasheets File :: 33766    Search Time::1.547ms    
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