...0 5 1.5 1 1 150 -55 ~ +150 Unit v
2.5 2.5 3 2 1
Parameter Collector to base voltage Collector to 2SD1198 2SD1198A 2SD1198
Symbol vCBO...250.05
s Absolute Maximum Ratings
0.550.1
0.450.05
max 100 100 100
4.10.2
Forward ...
Description
Silicon NPN epitaxial planer type darlington 1000 mA, 25 v, NPN, Si, SMALL SIGNAL TRANSISTOR
... 100 50 400 150 -55 ~ +150 Unit v v v mA mA mW C C
1:Base 2:Collector 3:Emitter
2.5 2.5
EIAJ:SC-71 M Type Mold Package
s Electrical ...250.05
max 100 1
4.10.2
4.50.1
Unit nA A v v v
50 40 15 400 0.05 120 80 2000 0.2
v...
... 500 400 150 -55 ~ +150
Unit v
1:Base 2:Collector 3:Emitter
2.5 2.5
emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
v ...
Description
Silicon NPN epitaxial planer type darlington(For low-frequency amplification) 500 mA, 50 v, NPN, Si, SMALL SIGNAL TRANSISTOR
...0 5 1 0.5 1 150 -55 ~ +150 Unit v v v A A W C C
1.27 0.45-0.1 1.27
Parameter Collector to base voltage Collector to emitter voltage Emit...250 200 150 100 50
400
25C
300 Ta=75C 200 25C -25C 100
0.1
0.3
1
3
10
0 0...
...N MAX 200 150 2 20 1.5 2.0 UNIT v v A A W v v s
vCESM vCEO IC ICM Ptot vCEsat vF tf
PARAMETER Collector-emitter voltage peak value Col...250 75
UNIT mA mA v v MHz pF us us us
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage:...
...200 100 400 150 -55 ~ +150 Unit v v v mA mA mW C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
EIAJ:SC-71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emi...
Description
Silicon NPN epitaxial planer type small signal transistor
...7 1 0.5 600 150 -55 ~ +150 Unit v
1.0
0.450.05 1
s Features
1.5
1.5 R0.9 R0.9
0.4
1.00.1
R
0. 7
s Absolute Maxim...250.05
max 0.1 1
4.10.2
4.50.1
Unit A A v
30 60 25 50 7 85 40 160 90 0.35 200 6
*2
...
Description
Silicon NPN epitaxial planer type(For medium-power general amplification)
....7 1.0 500 150 -55 to +150 Unit v v v A A mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol v(BR)CBO Min 30 15 5 -- -- -- 250 -- Typ -- -- -- -- -- 0.15 -- 250 Max -- -- -- 1.0 1.0 0.5 1200 -- ...
...50 -55 ~ +150
Unit
3 2 1
v
2.5 2.5
emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Colle...250.05
s Absolute Maximum Ratings
(Ta=25C)
0.550.1
0.450.05
4.10.2
Low noise volta...
Description
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)