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For unilateral Found Datasheets File :: 365 Search Time::1.766ms
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				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFR93AW
OCR Text	...ce transition frequency maximum unilateral power gain up to Ts = 93 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 30 mA; VCE =...
Description	NPN 5GHz wideband transistor(NPN 5G赫兹宽带晶体 NPN 5 GHz wideband transistor
File Size	87.45K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFR93A
OCR Text	...W pF GHz dB dB dB mV maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 7 noise figure output voltage IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt; Tamb = 25 C dim = -...
Description	NPN 6 GHz wideband transistor
File Size	117.63K / 12 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFR93
OCR Text	...ce transition frequency maximum unilateral power gain noise figure intermodulation distortion Ts 95 C IC = 2 mA; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 2 mA; ...
Description	NPN 5GHz wideband transistor(NPN 5G赫兹宽带晶体 NPN 5 GHz wideband transistor
File Size	98.97K / 12 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BFT93W
OCR Text	... dB C V V mA mW UNIT maximum unilateral power gain IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C noise figure junction temperature IC = -10 mA; VCE = -5 V; f = 500 MHz March 1994 2 Philips Semiconductors Product specifica...
Description	PNP 4 GHz wideband transistor
File Size	127.82K / 24 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFG97
OCR Text	...in transition frequency maximum unilateral power gain up to Ts = 125 C (note 1) IC = 70 mA; VCE = 10 V; Tj = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = ...
Description	NPN 5 GHz wideband transistor
File Size	117.28K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFG94
OCR Text	...ce transition frequency maximum unilateral power gain output voltage up to Ts = 140 C (note 1) IC = 0; VCE = 10 V; f = 1 MHz IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 45 mA; VCE = 10 ...
Description	NPN 6 GHz wideband transistor
File Size	100.33K / 13 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electro... Philips
Part No.	BFG520XR BFG520X BFG520XR_CNV_3 BFG520/XR BFG520XR-2015
OCR Text	...ce transition frequency maximum unilateral power gain up to Ts = 88 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 2...
Description	NPN 9 GHz wideband transistor From old datasheet system
File Size	113.45K / 13 Page	View it Online	Download Datasheet

				Philips
Part No.	PRF949 PRF949_3
OCR Text	...ce transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; ...
Description	UHF wideband transistor From old datasheet system
File Size	107.21K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BFG67W BFG67W_X BFG67W_XR BFG67W/X BFG67W/XR
OCR Text	...ce transition frequency maximum unilateral power gain noise figure up to Ts = 85 C IC = 15 mA; VCE = 5 V IC = 0; VCE = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 8 V; f = 2 GHz open emitter open b...
Description	NPN 8 GHz wideband transistor
File Size	97.35K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFQ136
OCR Text	...on transition frequency maximum unilateral power gain output voltage up to Tc = 100 C IC = 500 mA; VCE = 15 V; f = 500 MHz; Tj = 25 C IC = 500 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 C Ic = 500 mA; VCE = 15 V; dim = -60 dB; RL = 75 ; f(p+q-r...
Description	NPN 4 GHz wideband transistor
File Size	73.40K / 9 Page	View it Online	Download Datasheet

For unilateral Found Datasheets File :: 365 Search Time::1.766ms
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