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1N40011 CE4100 C2012 C2012 HD74LV AKD5393 MMBT2 AN7532
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For probability Found Datasheets File :: 5625    Search Time::1.86ms    
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    MRFG35010AR1

Freescale Semiconductor, Inc
Part No. MRFG35010AR1
OCR Text ... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain --10 dB Drain Efficiency -- 25% ACPR @ 5 MHz Offset -- - 43 dBc in 3.84 MHz Channel Bandwidth * 10 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Charact...
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 415.45K  /  20 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S21100NR1 MRF6S21100NBR1
OCR Text ... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR,...
Description RF Power Field Effect Transistors

File Size 852.71K  /  18 Page

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    MRF6S21060NBR1 MRF6S21060NR1

Freescale Semiconductor, Inc
Part No. MRF6S21060NBR1 MRF6S21060NR1
OCR Text ... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR, @...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 799.04K  /  18 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. TAJD106K035 MW4IC2230NBR1 100B0R3BW 100B1R8BW 100B8R2CW MW4IC2230GNBR1
OCR Text ... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 31 dB Drain Efficiency -- 15% ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth Driver Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA,...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 696.40K  /  16 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF7S19100NBR1 MRF7S19100NR1
OCR Text ...put Signal PAR = 7.5 dB @ 0.01% probability on CCDF. Power Gain -- 17.5 dB Drain Efficiency -- 30% Device Output Signal PAR -- 6.1 dB @ 0.01% probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Han...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 529.22K  /  15 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S27015GNR1 MRF6S27015NR1
OCR Text ... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 22% ACPR @ 5 MHz Offset -- - 45 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power Feat...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 593.99K  /  16 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MHV5IC2215NR207 MHV5IC2215NR2
OCR Text ....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 27.5 dB ACPR @ 885 kHz Offset -- - 60 dBc in 30 kHz Bandwidth * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, F...
Description RF LDMOS Wideband Integrated Power Amplifier

File Size 825.76K  /  19 Page

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    BLF7G22L-200 BLF7G22LS-200

NXP Semiconductors
Part No. BLF7G22L-200 BLF7G22LS-200
OCR Text ...64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for low memory effects prov iding e...
Description Power LDMOS transistor

File Size 150.43K  /  13 Page

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    MOTOROLA
Part No. MRF6P23190HR6
OCR Text ... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 23.5% IM3 @ 10 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * Capable of Ha...
Description 2400 MHz, 40 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFET

File Size 471.86K  /  12 Page

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    BLF7G21LS-160

NXP Semiconductors
Part No. BLF7G21LS-160
OCR Text ...64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. [2] test signal: 3gpp; test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low ...
Description Power LDMOS transistor

File Size 260.12K  /  14 Page

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