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  mhz-895 Datasheet PDF File

For mhz-895 Found Datasheets File :: 1611    Search Time::1.078ms    
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    MRF134

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF134
OCR Text ...cillator applications up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficienc...895 0.867 0.846 0.828 0.815 0.801 0.785 0.784 0.784 0.784 0.783 0.783 0.780 0.774 0.762 0.760 0.758 ...
Description N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 205.26K  /  10 Page

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    BYW29EX BYW29EX-150 BYW29EX-200 BYW29EX-100

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BYW29EX BYW29EX-150 BYW29EX-200 BYW29EX-100
OCR Text ...tance from both terminals f = 1 MHz to external heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER The...895 1.05 1.3 0.6 10 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SY...
Description Rectifier diodes ultrafast, rugged(超快速、强化的整流器二极管)
Rectifier diodes ultrafast/ rugged

File Size 47.05K  /  6 Page

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    BYW29F BYW29F-100 BYW29F-150 BYW29F-200

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BYW29F BYW29F-100 BYW29F-150 BYW29F-200
OCR Text ... 65% ; clean and dustfree f = 1 MHz MIN. - BYW29F series TYP. 12 MAX. 1500 - UNIT V pF THERMAL RESISTANCES SYMBOL Rth j-hs R...895 1.05 1.3 0.6 10 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SY...
Description Rectifier diodes ultrafast(超快速整流二极管)

File Size 40.21K  /  6 Page

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    MHW912

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MHW912
OCR Text ...Z. MHW912 12.5 W 884 to 915 MHz RF POWER AMPLIFIER CASE 301R-01, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25C) Rating DC Sup...895 900 905 910 915 920 f, FREQUENCY (MHz) Figure 2. Control Voltage, Efficienc...
Description 12.5 W 884 to 915 MHz RF POWER AMPLIFIER

File Size 128.35K  /  6 Page

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    MHW913

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MHW913
OCR Text ...Z. MHW913 14 WATT 880 - 915 MHz RF POWER AMPLIFIER CASE 301AB- 02, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25C) Rating DC S...895 f, Frequency (MHz) 905 910 915 Figure 2. Output Power versus Input Power Figure 3. Output ...
Description 14 WATT 880-915 MHz RF POWER AMPLIFIER

File Size 68.68K  /  4 Page

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    MHW932

MOTOROLA[Motorola, Inc]
Part No. MHW932
OCR Text ... AZ. MHW932 32 W 890 to 915 MHz RF POWER AMPLIFIER CASE 301S-02, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25C) Rating DC Sup...895 900 905 f, FREQUENCY (MHz) 910 915 0 10 20 30 40 50 60 70 Pin, INPUT POWER (mW) 80 90 100 902 MH...
Description 32 W 890 to 915 MHz RF POWER AMPLIFIER

File Size 117.29K  /  6 Page

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    TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662
OCR Text ... 2 X 100 mA IC = 500 mA f = 1.0 MHz f = 225 MHz 20 --11 60 150 --- --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications ar...
Description NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V))

File Size 17.20K  /  1 Page

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    UG10ACT UG10BCT UG10DCT UG10CCT

GE Security, Inc.
GE[General Semiconductor]
Part No. UG10ACT UG10BCT UG10DCT UG10CCT
OCR Text ..., 20A/s 100 TJ=125C f=1.0 MHz Vsig=50MVp-p 40 CAPACITANCE, pF @5A, 50A/s 30 @1A, 100A/s 10 20 @5A, 50A/s 10 @2A, 20A/s @1A, 100A/s trr Qrr 0 25 50 75 100 JUNCTION TEMPERATURE, C 125 1 0.1 1 1...
Description Ultrafast Soft Recovery Rectifier(超快软恢复整流器)

File Size 99.41K  /  2 Page

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