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5932B BUT11 ATV1005 CS3302 32300 M994AP MC1594L 13002
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  id-3.0a Datasheet PDF File

For id-3.0a Found Datasheets File :: 5465    Search Time::4.219ms    
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    STK0260I

AUK corp
Part No. STK0260I
OCR Text ... (Tc=25C) Symbol VDSS VGSS ID (Tc=25) (Tc=125) IDP PD IAS EAS IAR EAR TJ Tstg Rating 600 30 2.0 1.2 8.0 34 2.0 42 2.0 3.7 150 -55~150 Unit V V A A A W A mJ A mJ C Drain Power dissipation Avalanche current (Single) Single...
Description Advanced Power MOSFET

File Size 361.15K  /  8 Page

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    STK0380P

AUK corp
Part No. STK0380P
OCR Text ... (Tc=25C) Symbol VDSS VGSS ID TC=25 TC=100 IDM PD IAS EAS IAR EAR TJ Tstg Rating 800 30 3.0 1.9 12 107 3 320 12 10.7 150 -55~150 Unit V V A A A W A mJ A mJ C C Drain power dissipation Avalanche current (Single) Single pu...
Description Advanced Power MOSFET

File Size 193.82K  /  4 Page

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    AP4501SD

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP4501SD
OCR Text ...ER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID D1 30V 27m 7A -30V 49m -5A D2 PDIP-8 S1 S2 G1 Description The Advan...3 3 Rating N-channel 30 20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channel -30 20 -5 -4.2 -30 ...
Description 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 112.60K  /  11 Page

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    TSM8405P

Taiwan Semiconductor Co., Ltd.
Taiwan Semiconductor Company, Ltd
Part No. TSM8405P
OCR Text ...rature Range Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit - 12V 8 - 4.9 - 10 1. 5 +150 - 55 to +150 Unit V V A A W o o C C ...3-3 2003/10 rev. G Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM840...
Description Single P-Channel 1.8V Specified MicroSURF MOSFET

File Size 179.79K  /  6 Page

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    FDS6688S

Fairchild Semiconductor
Part No. FDS6688S
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwi...3 V mV/C m ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 16 A ID = 14.5 A VGS = 4.5 V, VGS=10 V, ID ...
Description 30V N-Channel PowerTrench SyncFET

File Size 161.35K  /  6 Page

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    FMV10N80E

Fuji Electric
Part No. FMV10N80E
OCR Text ...m : s q u a r e w a v e f o r m id [a] vds [v] safe operating area i d =f(v ds ):duty=0(singlepulse), tc=25c t = 1 s 1 0 s 1 m s 1 0 0 s ...3 4 5 6 7 8 9 1 0 0 . 1 1 1 0 1 0 0 id[a] vgs [v] typical transfer characteristic id=f(vgs):80s puls...
Description N-CHANNEL SILICON POWER MOSFET

File Size 467.22K  /  5 Page

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    IRLL014N IRLL014NTR

IRF[International Rectifier]
Part No. IRLL014N IRLL014NTR
OCR Text ... = 55V RDS(on) = 0.14 G S ID = 2.0A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ...3 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C...
Description Advanced Process Technology
HEXFET Power MOSFET

File Size 154.63K  /  9 Page

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    FQP10N60CF FQPF10N60CF

FAIRCHILD SEMICONDUCTOR CORP
Part No. FQP10N60CF FQPF10N60CF
OCR Text ...e Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Co...3) Units V A A A V mJ A mJ V/ns 9.0 * 5.7 * 36 * Gate-Source Voltage Single Pulsed Avalanc...
Description 600V N-Channel MOSFET

File Size 926.36K  /  10 Page

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    WTC2309

Weitron Technology
Part No. WTC2309
OCR Text ...wise Specified) Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -30 20 -3.7 -3.0 -12 1.38 90 -55~+150 Unit V A Total Power Dissipation(TA=25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temper...
Description P-Channel Enhancement Mode Power MOSFET

File Size 390.88K  /  6 Page

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    WTC2307

Weitron Technology
Part No. WTC2307
OCR Text ...wise Specified) Symbol VDS VGS ID I DM Value -16 8 -4.0 -3.3 -12 1.38 90 -55~+150 Unit V A Total Power Dissipation (TA=25C) PD R JA TJ , Tstg W C/W C Maximum (Thermal Resistance) Junction-ambient 3 Operating Junct...
Description P-Channel Enhancement Mode Power MOSFET

File Size 448.28K  /  6 Page

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