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18002 MT130 ER102 5C100 CX162 55C7V 684J63 45984
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  conduction Datasheet PDF File

For conduction Found Datasheets File :: 21497    Search Time::0.922ms    
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    T2510N

Infineon Technologies AG
Part No. T2510N
OCR Text ... current with different current conduction angles ? z th rec / ? z th sin khlung / cooling = 180 = 120 = 90 = 60 = 30 ? z th rec [c/w] 0,00188 0,00316 0,00413 0,00547 0,00745 beidseitig two-sided ...
Description Netz-Thyristor Phase Control Thyristor

File Size 284.19K  /  10 Page

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    SIP41103DM-T1

VISHAY SILICONIX
Part No. SIP41103DM-T1
OCR Text ...rotection prevents simultaneous conduction of external mosfets. adding a capacitor to the delay pin can further increase the high-side driver turn-on delay by 1.2 ns/pf for further shoot-through protec- tion. the sip41103 is available in bo...
Description 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO10

File Size 132.30K  /  8 Page

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    Micross
Part No. LSU424
OCR Text ...fss ? transconductance ? full ? conduction ? ? 300 ? ? \\? ? 1500 ? ? mho ? ? v ds ? = ? 10v ????????? v gs = ? 0v ?????? f ? = ? 1khz ? y fs ? typical ? operation ? 120 ? 200 ? 350 ? mho ? ????? v dg ? = ? 10v ?????????? i d = ? 30a ???? f...
Description Low Leakage

File Size 285.15K  /  1 Page

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    IRS2304SPBF

International Rectifier
Part No. IRS2304SPBF
OCR Text ... logic input compatible cross-conduction prevention logic matched propagation delay for both channels lower di/dt gate driver for better noise immunity internal 100 ns deadtime output in phase with input half-bridge driver product s...
Description HALF-BRIDGE DRIVER

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    VS-100MT160PAPBF

International Rectifier
Part No. VS-100MT160PAPBF
OCR Text ...ut current 45 75 100 a 120 rect conduction angle @ case temperature 100 80 80 c i fsm maximum peak, one-cycle 270 380 450 a t = 10ms no voltage forward, non-repetitive 280 398 470 t = 8.3ms reapplied on state surge current 225 320 380 t ...
Description MTP 3-Phase Rectifier Series

File Size 121.20K  /  8 Page

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    HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is ...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 140.21K  /  9 Page

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    HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high f...
Description 600V, SMPS Series N-Channel IGBT 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
600V SMPS Series N-Channel IGBT

File Size 153.85K  /  8 Page

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    HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high f...
Description From old datasheet system
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT

File Size 166.85K  /  11 Page

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    HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-pa...
Description 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB

File Size 158.34K  /  8 Page

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    HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderat...
Description From old datasheet system
14A 600V UFS Series N-Channel IGBTs
14A, 600V, UFS Series N-Channel IGBTs

File Size 91.85K  /  7 Page

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For conduction Found Datasheets File :: 21497    Search Time::0.922ms    
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