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Micron Technology, Inc.
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Part No. |
MT58L128L18D
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OCR Text |
...1 meet the setup and hold times around the rising edge of clk. 32-35, 44-49, 32-35, 44-49, sa 80-82, 99, 81, 82, 99, 100 100 93 93 bwa# input synchronous byte write enables: these active low inputs allow 94 94 bwb# individual bytes to be wr... |
Description |
128K x 18,3.3V I/O, Pipelined, Double-Cycle Deselect锛?yncBurst SRAM(2Mb锛?.3V杈??/杈??锛??姘寸嚎寮????惊???娑???╋??????????RAM)
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File Size |
426.16K /
24 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M5M5T5636G M5M5T5636GP-20
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OCR Text |
...bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high performance, low power CMOS technology, providing greater reliability. M5M5T5636GP operates on 2.5V power/ 1.8... |
Description |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
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File Size |
253.51K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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