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  a.sram Datasheet PDF File

For a.sram Found Datasheets File :: 17107    Search Time::1.937ms    
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    ZR36015 ZR36015PQC-30

ETC
Part No. ZR36015 ZR36015PQC-30
OCR Text ...p.) CMOS circuit operating with a single 5V power supply APPLICATIONS s Image processing s Multi-media s Scanners s Image Storage s Imag...SRAM Strip Buffer to support raster to/from block conversion and block interleave. The maximum numbe...
Description RASTER TO BLOCK CONVERTER

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    DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-7

DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
Part No. DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-70IND
OCR Text ...rds by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched ...
Description (DS1270AB/Y) 16M Nonvolatile SRAM

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    DS1270W

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
Part No. DS1270W
OCR Text ...rds by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched o...
Description 3.3V 16Mb Nonvolatile SRAM

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    HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
Part No. HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62256ALP-I HY62256ALR1 HY62256ALR2-I HY62256ALT1 HY62256ALT1-I HY62256AP HY62256AP-I HY62256AR1 HY62256AR2-I HY62256AT1 HY62256AT1-I HY62256AJ-55 HY62256AJ-85 HY62256AJ-I-70 HY62256AJ-I-55 HY62256AJ-I-85 HY62256ALJ-85 HY62256ALJ-I-70 HY62256ALLJ-85 HY62256ALLJ-55 HY62256ALLJ-70 HY62256AJ-70 HY62256ALJ-I-85 HY62256ALLP-55
OCR Text ...HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs power and 32,786 x 8-bits and outputs CMOS Static Random Low power c...sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm Voltage Speed Product No. (V) (ns) ...
Description 32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
   32Kx8bit CMOS SRAM

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    KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L KM684000BLG-7 KM684000BLG-7L KM684000BLGI-5 KM684000BLGI-5L KM684000BL

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L KM684000BLG-7 KM684000BLG-7L KM684000BLGI-5 KM684000BLGI-5L KM684000BLGI-7 KM684000BLGI-7L KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7 KM684000BLP-7L KM684000BLR-5L KM684000BLR-7L KM684000BLRI-5L KM684000BLRI-7L KM684000BLT-5L KM684000BLT-7L KM684000BLTI-5L KM684000BLTI-7L
OCR Text ... 80 0.4 3 100 20 100 50 Unit A A mA mA mA V V mA A A A A IOL=2.1mA IOH=-1.0mA CS=VIH, Other inputs = VIL or VIH Standby Current(CMO...SRAM 1. Including scope and jig capacitance AC CHARACTERISTICS (Vcc=4.5~5.5V, KM684000B Family...
Description 512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM

File Size 169.95K  /  9 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text ...t. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C parameters Previous spec. Updated spec. (12/15/20ns part) (12/15/20ns part) ...SRAM GENERAL DESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory ...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ... DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E use...SRAM Unit V V W C C C * Stresses greater than those listed under "Absolute Maximum Ratings" may ...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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    KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 KM62256DLG-7L KM62256DLGI-7 KM62256DLGI-7L KM62256DLP-5 KM62256DLP-5L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 KM62256DLG-7L KM62256DLGI-7 KM62256DLGI-7L KM62256DLP-5 KM62256DLP-5L KM62256DLP-7 KM62256DLP-7L KM62256DLRG-5 KM62256DLRG-5L KM62256DLRG-7 KM62256DLRG-7L KM62256DLRGI-7 KM62256DLRGI-7L KM62256DLTG-5 KM62256DLTG-5L KM62256DLTG-7 KM62256DLTG-7L KM62256DLTGI-7 KM62256DLTGI-7L
OCR Text ...10 5 20 60 0.4 1 30 5 mA V V mA A A Unit A A mA mA Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL IOL=2.1mA IOH=-1.0mA CS=VIH,...SRAM 1. Including scope and jig capacitance AC CHARACTERISTICS (Vcc=4.5~5.5V, KM62256D Family:...
Description 438100341
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM

File Size 169.01K  /  9 Page

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    KM681001A KM681001A-15 KM681001A-20

http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM681001A KM681001A-15 KM681001A-20
OCR Text ...lete Preliminary Update D.C and A.C parameters. 3.1. Update D.C parameters Previous spec. Items (15/17/20ns part) Icc 190/180/170mA Isb 30mA...SRAM GENERAL DESCRIPTION The KM681001A is a 1,048,576-bit high-speed Static Random Access Memory o...
Description 128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system

File Size 164.53K  /  9 Page

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