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    2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...90.7 -97.9 -104.5 -112.1 -118.6 -126.7 -134.1 -142.4 -149.2 -157.4 -163.5 -170.6 -175.6 5 2SC5...
Description    NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2

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NEC[NEC]
NEC Corp.
Part No. 2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...90.7 81.3 72.9 65.0 57.9 51.2 45.2 38.6 32.7 26.9 20.9 15.5 9.8 4.6 -1.3 -6.8 -12.2 -17.4 -22.9 -28....
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
Discrete

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...90.7 -95.2 -99.4 -104.0 -110.4 -118.3 -127.7 -139.6 -152.7 -168.2 -178.3 -166.7 S12 aNG 153.6 15...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ... 10 V, IC = 7 ma,f = 1.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...90.2 86.0 82.2 78.5 75.6 72.2 69.5 67.0 64.4 61.7 58.9 56.3 53.7 51.9 49.5 46.9 45.1 42.5 40.8 39.3 ...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...= 3 V, IC = 3 ma,f = 2.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...90.3 -93.1 -93.5 -101.3 -103.4 -113.9 -115.1 -121.2 -127.8 -138.4 -147.3 -149.6 -158.2 -165.5 S12...
Description HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ... 3 V, IC = 3 ma, f = 2.0 GHz a a Noise Figure NF 1.5 2.5 dB *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2...90.7 -97.4 -104.1 -110.7 -117.6 -124.9 -132.3 -140.3 -145.0 -151.9 -160.1 -167.5 -172.8 -177.4 175.5...
Description Discrete
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ... 2.50.5 1 2 2.50.5 3 V V a a W C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type P...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ... IC IB PC Tj Tstg 7 V V V a a a W C C 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current tran...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ....0 150 -55 to +150 Unit V V V V a a a W C C 15.00.3 3.00.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissip...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ... 2 150 -55 to +150 Unit V V V V a a a W C C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteris...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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