...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...90.7 -97.9 -104.5 -112.1 -118.6 -126.7 -134.1 -142.4 -149.2 -157.4 -163.5 -170.6 -175.6
5
2SC5...
Description
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor
...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...90.7 81.3 72.9 65.0 57.9 51.2 45.2 38.6 32.7 26.9 20.9 15.5 9.8 4.6 -1.3 -6.8 -12.2 -17.4 -22.9 -28....
Description
NPN epitaxial-type silicon transistor NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD Discrete
...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...90.7 -95.2 -99.4 -104.0 -110.4 -118.3 -127.7 -139.6 -152.7 -168.2 -178.3 -166.7
S12 aNG
153.6 15...
Description
NPN epitaxial-type silicon transistor NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
...
2.50.5 1 2
2.50.5 3
V V a a W C C
1.20.1 0.65 max. 0.45+0.1 - 0.05
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT2 Type P...
Description
Transistor Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)
... IC IB PC Tj Tstg
7
V V V a a a W C C
1:Base 2:Collector 3:Emitter TO-220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current tran...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
....0 150 -55 to +150 Unit V V V V a a a W C C
15.00.3
3.00.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissip...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
... 2 150 -55 to +150 Unit V V V V a a a W C C
15.00.3
3.00.2
13.7-0.2
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123
2.60.1 0.70.1
7
1:Base 2:Collector 3:Emitter TO-220E Full Pack Package
s Electrical Characteris...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)