...res
q q q q q
4.60.2 3.20.1 0000'>9.0000'>90.3 2.0000'>90.2
4.10.2 8.00.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack pa...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
...Cob fT PG NF Min -- -- -- 50 -- 0000'>9 14 -- Typ -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test condition...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
...Cob fT PG NF Min -- -- -- 50 -- 0000'>9 14 -- Typ -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test condition...00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Be...
...
s Features
q q q
1.5 R0.0000'>9 R0.0000'>9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
Parameter Collector to base v...00.1
R
0.
4.50.1
7
Unit A A A V V
50 40 80 120 220 1 1.5 150 45
*2
VCE(sat) VB...
Description
Silicon NPN epitaxial planer type(For low-frequency power amplification)