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SGS Thomson Microelectronics
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Part No. |
TPA-SERIES
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OCR Text |
...t IBO measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional de...4: On-state current versus on-state voltage (typical values).
IT(A)
VR(V)
VT(V)
Fig. 5: ... |
Description |
TRISIL
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File Size |
53.02K /
5 Page |
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it Online |
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JILIN SINO-MICROELECTRONICS CO., LTD.
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Part No. |
3DD5287-O-A-N-D
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OCR Text |
...B=0 IC=1mA,IE=0 IE=1mA,IC=0 VCB=800V, IE=0 VEB=7V, IC=0 VCE = 4 V, IC = 1.8 A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A IC=1.8A,2IB1=-IB2=0.9A fH=15.75kHz VCE=12V, IC=0.35A
xiO
Min
Unit
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) ... |
Description |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY
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File Size |
143.01K /
6 Page |
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ST Microelectronics
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Part No. |
STD2NB80T4 STD2NB80-1
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OCR Text |
800V - 4.6 - 1.9A - IPAK/DPAK PowerMESHTM MOSFET
TYPE STD2NB80
s s s s s s
V DSS 800 V
R DS(on) < 6.5
ID 1.9 A
TYPICAL RDS(on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GA... |
Description |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET
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File Size |
282.47K /
9 Page |
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ST Microelectronics
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Part No. |
STW11NB80
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OCR Text |
800v - 0.65 w - 11a - t0-247 powermesh ? mosfet n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 30v gate to source voltage ...4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ... |
Description |
N-CHANNEL PowerMESH MOSFET
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File Size |
107.41K /
8 Page |
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it Online |
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Price and Availability
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