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  800v 0.2a Datasheet PDF File

For 800v 0.2a Found Datasheets File :: 1088    Search Time::1.438ms    
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    FS5KM-16A FS5KM-16

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS5KM-16A FS5KM-16
OCR Text .................................. 800v rDS (ON) (MAX) ................................................................ 2.3 ID ...................0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 1.76 3.52 5.0 1050 100 20 20 18 110 35 1.0 -- Max. -...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 49.83K  /  4 Page

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    KTC4526

KEC Holdings
KEC(Korea Electronics)
Part No. KTC4526
OCR Text ...E(sat) ) TEST CONDITION VCB=800v, IE=0 VEB=5V, IC=0 IC=0.75A, IB1=-IB2=0.15A L=5mH, Clamped IC=0.75A, IB=0.15A IC=0.75A, IB=0.15A VCE=5V, IC=0.1A VCE=5V, IC=0.5A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0...
Description TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)

File Size 80.70K  /  3 Page

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    SPA11N80C3 SPP11N80C3

Infineon Technologies AG
Part No. SPA11N80C3 SPP11N80C3
OCR Text ...h) I DSS ID=680A, VGS =VDS VDS=800v, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ. max. 0.8 3.7 62 80 260 Unit K/W C Values typ. 870 3 0.5 0.39 1.1 0.7 max. 3.9 800 2.1 - Unit V ...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800v C2 marking to C3. 800v C2 ...
Cool MOS⑩ Power Transistor

File Size 250.35K  /  12 Page

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    PAH2008 PAT2008

NIEC[Nihon Inter Electronics Corporation]
Part No. PAH2008 PAT2008
OCR Text 800v PAT2008 PAH2008 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability ...0.2a/s * Unit A A A A2s A/s 200 314 4000 8000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 ...
Description THYRISTOR MODULE

File Size 260.30K  /  5 Page

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    Sanyo
Part No. 2SC4429
OCR Text 800v/8A Switching Regulator Applications Features * High breakdown voltage, high reliability. * Fast switching speed (tf : 0.1s typ). * Wide ASO. * Adoption of MBIT process. * Micaless package facilitating easy mounting. Package Dimens...
Description NPN Triple Diffused Planar Silicon Transistor 800v/8A Switching Regulator Applications

File Size 105.91K  /  4 Page

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    http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SD2580
OCR Text ...ff Current Symbol ICBO ICES VCB=800v, IE=0 VCE=1500V, RBE=0 800 40 130 Conditons Ratings min typ max 10 1.0 Unit A mA V mA VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 Continued on next page. Any and all SANYO products described or c...
Description Color TV Horizontal Deflection Output Applications
NPN Triple Diffused Planar Silicon Transistor

File Size 42.56K  /  4 Page

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    FS2KM-16A

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS2KM-16A
OCR Text .................................. 800v rDS (ON) (MAX) ................................................................ 6.0 ID ............................................................................................ 2A Viso ..................
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 48.09K  /  4 Page

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    NTE[NTE Electronics]
Part No. NTE56049 NTE56050
OCR Text ...ended, off-state voltages up to 800v may be applied without damage, but the TRIAC may switch to the on-State. The rate-of-rise of current sh...0.1A IT = 5A VD = 12V, IT = 0.1A VD = 400V, IT = 0.1A, TJ = +125C Off-State Leakage Current Dynamic ...
Description TRIAC / 4A Low Logic Level
TRIAC, 4A Low Logic Level

File Size 19.44K  /  2 Page

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    NIEC[Nihon Inter Electronics Corporation]
Part No. PBH308AC
OCR Text 800v PBH308AC OUTLINE DRAWING FEATURES * Isolated Base * Thyristors and Diodes H-Bridge Circuit * High Surge Capability * UL Recogni...0.2a/s * Unit A A A2s A/s 30 600 1800 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 ...
Description THYRISTOR MODULE

File Size 175.72K  /  4 Page

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    PDH2008 PDT2008

Nihon Inter Electronics Corporation
Part No. PDH2008 PDT2008
OCR Text 800v PDT2008 PDH2008 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL ...0.2a/s * Unit A A A A2s A/s 200 314 4000 80000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40...
Description THYRISTOR MODULE 200A / 800v

File Size 261.50K  /  5 Page

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