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Anpec Electronics Corporation
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Part No. |
APM4542KC-TU APM4542KC-TUL APM4542KC-TR
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OCR Text |
...=-10v r ds(on) =51m ? (typ.) @ v gs =-4.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) p-channel mosfet g1 s1 s2 g2 d1 d1 d2 d2 top view... |
Description |
Dual Enhancement Mode MOSFET (N-and P-Channel)
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File Size |
154.63K /
13 Page |
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it Online |
Download Datasheet |
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http://
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Part No. |
KDD3680
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OCR Text |
...on) = 46m @v gs =10v r ds(on) = 51m @v gs =6v low gate charge (38 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 par... |
Description |
100V N-Channel Power Trench MOSFET
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File Size |
59.32K /
2 Page |
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it Online |
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Sumida, Corp. SUMIDA CORP
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Part No. |
CDH53NP-101JC CDH53NP-221JC
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OCR Text |
...np-2r2m 2r2 2.2 20 % 66m (51m) 2.03 cdh53np-3r3m 3r3 3.3 20 % 88m (68m) 1.88 cdh53np-4r7m 4r7 4.7 20 % 96m (74m) 1.68 cdh53np-100l 100 10 15 % 0.16(0.13) 1.23 cdh53np-120l 120 12 15 % 0.18(0.14) 1.12 ... |
Description |
POWER INDUCTOR 100UH 0.37A SMD 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR, SMD
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File Size |
146.56K /
2 Page |
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it Online |
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BI Technologies, Corp.
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Part No. |
KMA7D0NP30Q
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OCR Text |
...typ.) @ v gs =-10v. : r ds(on) =51m (typ.) @ v gs =-4.5v. super high dense cell design for extermely low r ds(on) . reliable and rugged. maximum rating (ta=25 ) flp-8 b2 g h b1 0.5 max p t 1.27 millimeters 0.4 0.1 0.15+0.1/ - 0.05 4.9 ... |
Description |
30 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET FLP-8, 8 PIN
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File Size |
84.64K /
8 Page |
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it Online |
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Price and Availability
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