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Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
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| Part No. |
FDPF12N50UT
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| OCR Text |
...v, v gs = 0v - - 25 a v ds = 400v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...10a v gs = 10v (note 4, 5) -2130n... |
| Description |
10 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB ROHS COMPLIANT, TO-220F, 3 PIN
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| File Size |
599.48K /
9 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP18N50W AP18N50W-14
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| OCR Text |
...in-source leakage current v ds =400v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge...10a - 80 - ns t d(off) turn-off delay time r g =50 ? ,v gs =10v - 525 - ns t f fall time r d =20 ? -... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
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| File Size |
91.00K /
4 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IHW30N60T
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| OCR Text |
... 260 s W C V
VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...10a 0A 100Hz 1kHz 10kHz 100kHz TC=80C TC=110C
10a 50s
Ic
1A DC
1ms 10ms
0.1A 1V
10... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
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| File Size |
365.19K /
12 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP18N50W-HF
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| OCR Text |
...in-source leakage current v ds =400v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge...10a - 80 - ns t d(off) turn-off delay time r g =50 - 525 - ns t f fall time v gs =10v - 100 - ns c ... |
| Description |
Fast Switching Characteristic
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| File Size |
99.39K /
5 Page |
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it Online |
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INFINEON
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| Part No. |
IHW40N60T
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| OCR Text |
... 260 s W C V
VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...10a
10s 50s
Ic
1A
DC
1ms 10ms
100Hz
1kHz
10kHz
100kHz
1V
10V
100... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
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| File Size |
381.86K /
12 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IDP20C65D2
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| OCR Text |
... -740 - a/s t vj =25c, v r =400v, i f =10.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch ikw50n65h5 diode reverse recovery ...10a t j =175c, i f = 10a figure 4. typical reverse recovery charge per diode as a function of diode... |
| Description |
Emitter Controlled Diode Rapid 2 Common Cathode Series
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| File Size |
1,678.14K /
10 Page |
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SGS Thomson Microelectronics
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| Part No. |
BUF420A
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| OCR Text |
... v bb =-5v r bb =0.6 w v clamp =400v i b1 =0.5a l = 0.25 mh 1 0.05 0.08 m s m s m s t s t f t c inductive load storage time fall time cross over time i c =10a v cc =50v v bb =-5v r bb =0.6 w v clamp =400v i b1 =1a l = 0.25 mh t j =100 o c 2... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
78.82K /
8 Page |
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it Online |
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