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  4.6cm Datasheet PDF File

For 4.6cm Found Datasheets File :: 680    Search Time::1.485ms    
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    INFINEON[Infineon Technologies AG]
Part No. SPI35N10 SPP35N10 SPB35N10
OCR Text ...00C Symbol ID Value 35 26.4 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 140 245 6 20 150 -55....6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Pa...
Description SIPMOS Power-Transistor

File Size 477.25K  /  8 Page

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    L9907N L9907ND 1417 L9907

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
Part No. L9907N L9907ND 1417 L9907
OCR Text ...L883C BLOCK DIAGRAM SO20L(12+4+4) ORDERING NUMBER: L9907ND (SO20L) DESCRIPTION The L9907N is a monolithic integrated power comparat...6cm on board heat sink area 2/8 L9907N ELECTRICAL CHARACTERISTICS (7V < VS < 18V, -40C < Tj <...
Description From old datasheet system
MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENT

File Size 82.71K  /  8 Page

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    SPB160N04S2-03

INFINEON[Infineon Technologies AG]
Part No. SPB160N04S2-03
OCR Text ...n) 40 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID =250A Zero gate voltage drain current V DS=40V,...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Pag...
Description Low Voltage MOSFETs - TO263; 160A; 40V; NL;2.9mohm
OptiMOS Power-Transistor

File Size 297.88K  /  8 Page

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    SPB160N04S2L-03

INFINEON[Infineon Technologies AG]
Part No. SPB160N04S2L-03
OCR Text ...ource on-state resistance V GS=4.5V, I D=80A Drain-source on-state resistance V GS=10V, I D=80A 1Current limited by bondwire ; with ...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Pag...
Description Low Voltage MOSFETs - TO263;160A;LL
OptiMOS Power-Transistor

File Size 296.79K  /  8 Page

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    SPD08N50C3

Infineon Technologies AG
Part No. SPD08N50C3
OCR Text ... TC = 25 C TC = 100 C A 7.6 4.6 Pulsed drain current, t p limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V ID pul...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3So...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor

File Size 253.38K  /  11 Page

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    IDD06E60

Infineon Technologies AG
Part No. IDD06E60
OCR Text ... Unit ns 70 100 105 6.5 7.4 7.9 240 360 400 4 4.8 4.9 A nC - Peak reverse current V R=400V, IF=6A, di/dt=550A/s, Tj=25C V R=400V, IF=6A, di/dt=550A/s, Tj=125C V R=400V, IF=6A, di/dt=550A/s, Tj=150C Reverse recovery charge V R=...
Description Silicon Power Diodes - 6A EmCon in TO252
Fast Switching EmCon Diode

File Size 178.56K  /  8 Page

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    MAXIM[Maxim Integrated Products]
Part No. MAX9759ETE MAX9759EUE_ MAX9759 MAX9759ETE_
OCR Text ...3.2W of continuous power into a 4 load while offering greater than 90% efficiency. Maxim's next-generation, low-EMI modulation scheme allows...6cm of Cable 92% Efficiency High PSRR (81dB at 1kHz) Low 0.02% THD+N External Clock Synchronizat...
Description 3.2W, High-Efficiency, Low-EMI, Filterless, Class D Audio Amplifier

File Size 918.23K  /  20 Page

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    SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
OCR Text ...m (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-s...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4So...
Description Cool MOS??Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 349.21K  /  14 Page

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    SPA11N65C3

Infineon Technologies AG
Part No. SPA11N65C3
OCR Text ... A 11 7 11 1) 71) 33 340 0.6 4 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.5A, VDD=50V ID...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4So...
Description Cool MOS⑩ Power Transistor

File Size 275.83K  /  14 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BAT70-05 Q62702-A1223
OCR Text ... For clamping and protection 4 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type ...6cm 2 Cu 2) see DC/pulse derating curve V R = f (T A) Semiconductor Group Semiconductor Group 11 ...
Description Silicon Schottky Diodes (Parallel connection for maximum IF per package Low forward voltage drop For power supply)

File Size 16.00K  /  2 Page

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