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  2a 200v Datasheet PDF File

For 2a 200v Found Datasheets File :: 2595    Search Time::1.188ms    
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    FS5UM-9

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS5UM-9
OCR Text ...S = 0V ID = 1mA, VDS = 10V ID = 2a, VGS = 10V ID = 2a, VGS = 10V ID = 2a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 30 -- -...200v, ID = 2a, VGS = 10V, RGEN = RGS = 50 IS = 2a, VGS = 0V Channel to case PERFORMANCE CURVES...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.10K  /  4 Page

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    Sanyo Semiconductor Corporation
Part No. C5698
OCR Text ...8 012345678910 it02567 i b =0 0.2a 0.05a 0.4a 0.6a 0.8a 1.0a 1.2a 1.4a 1.6a 1.8a 2.0a ta=120 c 25 c --40 c v ce =5v v ce (sat) -- i c...200v v be = --2v + + 50 input output r l 66.7 100 f 470 f pw=20 s i b1 d.c. 1% i b2 2sc569...
Description Search --To 2SC5698

File Size 61.46K  /  4 Page

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    FS5UM-10

Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS5UM-10
OCR Text ...S = 0V ID = 1mA, VDS = 10V ID = 2a, VGS = 10V ID = 2a, VGS = 10V ID = 2a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 30 -- -...200v, ID = 2a, VGS = 10V, RGEN = RGS = 50 IS = 2a, VGS = 0V Channel to case PERFORMANCE CURVES...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.31K  /  4 Page

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    IRF7453

IRF[International Rectifier]
Part No. IRF7453
OCR Text ...S(on) max 0.23@VGS = 10V ID 2.2a l VDSS 250V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized ...200v, VGS = 0V, TJ = 150C 100 VGS = 24V nA -100 VGS = -24V Dynamic @ TJ = 25C (unless otherwise s...
Description Power MOSFET(Vdss=250V, Id=2.2a)

File Size 163.18K  /  8 Page

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    HFA35HB60

International Rectifier
Part No. HFA35HB60
OCR Text ...2a I F = 11A I F = 44 A I F = 2 2a I F = 11 A trr- (nC) 90 Irr- ( A) 10 60 30 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 0...200v 0 Q rr 2 I RRM 0 .5 I R R M d i(re c)M /d t 5 0.0 1 L = 7 0 H D .U .T . D G IR F...
Description 600V 22a Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
22 A, SILICON, RECTIFIER DIODE, TO-254AA

File Size 123.69K  /  5 Page

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    SANYO
Part No. 2SC3990
OCR Text ... IE=0 VEB=5V, IC=0 VCE=5V, IC=3.2a VCE=5V, IC=16A VCE=10V, IC=3.2a VCB=10V, f=1MHz L 30 20 M 40 30 N 50 Ratings min typ max 10 10 15* 8 ...200v, 5IB1=-2.5IB2=IC=18A, RL=11.1 tstg tf VCC=200v, 5IB1=-2.5IB2=IC=18A, RL=11.1 VCC=200v, 5IB1=-2....
Description NPN Triple Diffused Planar Silicon Transistor

File Size 108.92K  /  5 Page

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    Fairchild Semiconductor, Corp.
Part No. FJL6920TU
OCR Text ...1.5a i b =1.0a i b =0.5a i b =0.2a i c [a], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 1 10 100 v ce = 5v ta ...200v, i c = 10a, i b1 = 2a t stg & t f [ s], switching time i b2 [a], reverse base current...
Description NPN Triple Diffused Planar Silicon Transistor; Package: TO-264; No of Pins: 3; Container: Rail 20 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-264AA

File Size 113.43K  /  7 Page

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