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NXP Semiconductors N.V.
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Part No. |
BYV79E-200
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OCR Text |
...forward volt drop v r = 150 v/ 200 v ? fast switching ? soft recovery characteristic v f 0.9 v ? reverse surge capability ? high thermal ...pin description intended for use as output rectifiers in high frequency switched mode 1 cathode powe... |
Description |
Ultrafast power diode BYV79E-200<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<week 1, 2005,;
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File Size |
99.28K /
8 Page |
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SILICON STORAGE TECHNOLOGY INC
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Part No. |
SST29LE020-200-4I-EH
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OCR Text |
...n: 120 ns ? 3.0-3.6v operation: 200 ns ? 2.7-3.6v operation: 200 ns latched address and data automatic write timing ? internal v pp ge...pin pdip product description the sst29ee/le/ve020 are 256k x8 cmos page-write eeprom manufactured wi... |
Description |
256K X 8 EEPROM 3V, 200 ns, PDSO32
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File Size |
329.20K /
27 Page |
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it Online |
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
BUK444-200 BUK444-200A BUK444-200B BUK444
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OCR Text |
... on-state resistance MAX. -200A 200 5.3 25 0.4 MAX. -200B 200 4.7 25 0.5 UNIT V A W
PINNING - SOT186
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
123
s
LIMITING VALUES
Li... |
Description |
PowerMOS transistor 功率金属氧化物半导体晶体 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk PowerMOS transistor
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File Size |
76.65K /
7 Page |
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it Online |
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Price and Availability
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