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  18ghz Datasheet PDF File

For 18ghz Found Datasheets File :: 336    Search Time::4.094ms    
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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA183
OCR Text ...ut/Output Return Loss Typical 2-18ghz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX2.38mm (.064"X.094") Chip Thickness : 100m 2 Pad Dimension : 100m . 2-18 GHz MESFET Amplifier LMA183 Desc...
Description 2-18 GHz MESFET Amplifier
File Size 63.58K  /  3 Page

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    CHA6517 CHA6517-99F_00 CHA6517-99F/00

United Monolithic Semiconductors
Part No. CHA6517 CHA6517-99F_00 CHA6517-99F/00
OCR Text ...utput Power versus Frequency 18ghz 12GHz 6GHz Id versus Pin Ref. : DSCHA6517-8205 - 25 Jun 08 4/10 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: ...
Description 6 - 18 GHz High Power Amplifier
File Size 428.64K  /  10 Page

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    EPB025A

Excelics Semiconductor, Inc.
ETC[ETC]
Part No. EPB025A
OCR Text ...e f = 12GHz f = 12GHz f=12GHz f=18ghz f=12GHz f=18ghz Chip Thickness: 75 13 microns All Dimensions In Microns MIN TYP 0.80 MAX 1.0 UNIT dB dB dBm dB 10.0 11.0 15.0 15.0 13.0 11.0 Vds=2V, Vgs=0V Vds=2V, Vgs=0V Vds=2V...
Description Low Noise High Gain Heterojunction FET
File Size 21.21K  /  2 Page

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    EFC240B

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor, Inc.
Part No. EFC240B
OCR Text ...f=12GHz Vds=10V, Ids=50% Idss f=18ghz Gain at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18ghz Power Added Efficiency at 1dB compression Vds=10V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, V...
Description Low Distortion GaAs Power FET
File Size 27.53K  /  2 Page

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    EFC060B

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFC060B
OCR Text ...f=12GHz Vds=10V, Ids=50% Idss f=18ghz Gain at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18ghz Power Added Efficiency at 1dB Compression Vds=10V, Idss=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, ...
Description Low Distortion GaAs Power FET
File Size 20.98K  /  2 Page

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    EFA060B-70

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA060B-70
OCR Text ... f=12GHz Vds=6V, Ids=50% Idss f=18ghz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18ghz Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs...
Description Low Distortion GaAs Power FET
From old datasheet system
File Size 18.75K  /  2 Page

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    EFA040A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA040A-70
OCR Text ...nce Pinch-off Voltage f=12GHz f=18ghz f=12GHz f=18ghz f=12GHz 60 45 MIN 20.0 6.5 TYP 22.0 22.0 8.0 5.0 33 105 60 -2.0 -10 -6 -15 -14 250* o MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 mA 160 mA mS -3.5...
Description Low Distortion GaAs Power FET 低失真GaAs功率场效应管
File Size 18.75K  /  2 Page

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    EFA025AL

Excelics Semiconductor, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA025AL
OCR Text ... f=12GHz Vds=8V, Ids=50% Idss f=18ghz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18ghz Power Added efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs...
Description High Gain GaAs Power FET 高增益GaAs功率场效应管
File Size 20.54K  /  2 Page

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    EFA025A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA025A-70
OCR Text ...GHz P1dB Vds=6V, Ids=50% Idss f=18ghz Gain at 1dB Compression f=12GHz G1dB Vds=6V, Ids=50% Idss f=18ghz Power Added Efficiency at 1dB Compression PAE Vds=6V, Ids=50% Idss f=12GHz Noise Figure Vds=3V,Ids=15mA f=12GHz NF Associated Gain Vds=3...
Description Low Distortion GaAs Power FET
File Size 31.33K  /  2 Page

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    EPA025A

Excelics Semiconductor, Inc.
Part No. EPA025A
OCR Text ...=3V, Ids=1.0mA -11 -7 f=12GHz f=18ghz f=12GHz f=18ghz f=12GHz f=12GHz f=12GHz 40 50 MIN 21.0 12.0 TYP 22.5 22.5 13.5 11.0 47 0.85 11.0 75 80 -1.0 -15 -14 155 o MAX UNIT dBm dB % dB dB 105 mA mS -2.5 V V V C/W Drain Bre...
Description 8-12V high efficiency heterojunction power FET
File Size 38.98K  /  3 Page

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