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				ACCUTEK MICROCIRCUIT CORPORATION
Part No.	AK68128D1C AK68128D1C09
OCR Text	128k x 8 bit words. the as - sembly consists of one medium speed 128k x 8 sram in a tsop type 1 package. the module is supplied in a 600 mil wide, 32 pin dip (dual in-line package) configuration. this pinout is completely compatible with in...
Description	Static Random Access Memory
File Size	92.74K / 2 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K6F1008R2M K6F1008V2M K6F1008S2M
OCR Text	128k x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Erase 100ns from KM68FS1000 Family - Add 150ns for KM68FS1000 Family - Add 32-sTSOP1 new...
Description	SRAM
File Size	192.62K / 11 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc.
Part No.	SST29VE010-120-3I-EH SST29LE010-90-4C-N SST29VE010-90-4C-N SST29LE010-90-3I-E SST29VE010-90-3I-E SST29LE010-90-3I-EH SST29VE010-90-3I-EH SST29LE010-90-4I-E SST29VE010-90-4I-E SST29LE010-150-3C-W SST29LE010-250-3C-E SST29LE010-250-3C-U SST29LE010-250-3C-W SST29LE010-250-3C-N SST29LE010-250-3C-P SST29VE010-250-3C-NH SST29LE010-250-3C-NH SST29LE010-120-4I-W SST29LE010-250-4I-W SST29LE010-150-4I-W SST29LE010-200-4I-W SST29LE010-90-4I-W SST29VE010-120-3I-P SST29VE010-200-3I-P SST29VE010-120-3I-WH SST29LE010-90-3I-P SST29LE010-250-3I-P SST29LE010-150-3I-W SST29LE010-200-3I-W SST29VE010-200-3I-W SST29LE010-200-3I-P SST29VE010-250-3I-W SST29VE010-90-4I-W SST29LE010-150-3I-P SST29VE010-150-3I-P SST29VE010-150-3I-W SST29VE010-250-3I-P SST29VE010-90-3I-W SST29VE010-200-3I-E SST29VE010-90-3I-P SST29LE010-250-3I-W SST29LE010-90-3I-W SST29VE010-90-3C-W SST29LE010-250-3C-UH SST29VE010-120-3I-PH SST29LE010-90-3C-U SST29VE010-90-3C-U SST29LE010-90-3C-UH SST29VE010-90-3C-UH SST29VE010-120-3C-UH SST29VE010-200-3C-UH SST29VE010-120-3C-E SST29VE010-250-3C-E SST29LE010-90-3I-NH SST29LE010-150-3I-NH SST29LE010-200-3I-NH SST29LE010-250-3I-NH SST29VE010-120-3I-NH SST29VE010-90-3I-UH SST29VE010-120-3I-UH SS
OCR Text	128k x 8) Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: * Single Voltage Read and Write Operations - 5.0V-only for the 29EE010 - 3.0V-only for the 29LE010 - 2.7V-only for the 29VE010 * Superior Reliability - En...
Description	Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: No error against RF noise Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Open drain type Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type 1 Megabit (128k x 8) Page Mode EEPROM 1兆位128k的8）页模式EEPROM Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type 1兆位28K的8）页模式的EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8）页模式的EEPROM 1 Megabit (128k x 8) Page Mode EEPROM 1兆位28K的8）页模式的EEPROM 1 Megabit (128k x 8) Page Mode EEPROM 1兆位28K的8）页模式EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8）页模式EEPROM Logic IC; Function: Quad. Differential Line Receivers with 3-state outputs (EIA RS-422A, 423A); Package: DIP; Remarks: Interface IC 1兆位28K的8）页模式的EEPROM 1 Megabit (128k x 8) Page Mode EEPROM 1兆位128k的8）页模式的EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise
File Size	893.50K / 27 Page	View it Online	Download Datasheet

				Atmel, Corp. Atmel Corp. ATMEL Corporation
Part No.	AT49BV-LV002 AT49BV002-90VI ATMELCORP.-AT49BV-LV002
OCR Text	... - Two Main Memory Blocks (96K, 128k Bytes) Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 s/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 25 mA Active Current - 50...
Description	2-Megabit (256K x 8) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56K × 8）单2.7伏电池电压⑩闪存 x8 Flash EEPROM 2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
File Size	122.85K / 21 Page	View it Online	Download Datasheet

				ETC
Part No.	28C011T
OCR Text	128k x 8-Bit) EEPROM VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy 28C011T A7 A16 X Decoder Memory Array ...
Description	1 Megabit (128k x 8-Bit) EEPROM
File Size	240.20K / 15 Page	View it Online	Download Datasheet

				IDT
Part No.	IDT72V2103L7-5BC IDT72V2103L7-5BCI IDT72V2103L7-5PF IDT72V2103L7-5PF8 IDT72V2113L7-5BC IDT72V2113L7-5BCI IDT72V2113L7-5PF IDT72V2113L7-5PF8 IDT72V2113L10PF8 IDT72V2113L10PFI IDT72V2113L15PF IDT72V2113L15PF8 IDT72V2113L6BC IDT72V2103L10PFI
OCR Text	...x 9/18, 32K x 9/18, 64K x 9/18, 128k 9 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES DESCRIPTION: The IDT72V2103/72V2113 are exceptionally deep, high speed, CMOS First-In-First-Out (FIFO) memories with clocked read and write controls ...
Description	128k x 18 / 256K x 9 SuperSync II FIFO, 3.3V 256K x 18 / 512K x 9 SuperSync II FIFO, 3.3V
File Size	448.61K / 46 Page	View it Online	Download Datasheet

				INTEGRATED SILICON SOLUTION INC
Part No.	IS61NLF12832-9TQ
OCR Text	...ear burst sequence is selected. 128k x 32, 128k x 36 and 256k x 18 flow-through 'no wait' state bus sram preliminary information may 2002 fast access time symbol parameter -8.5* -9 -10 units t kq clock access time 8.5 9 10 ns t kc cycle tim...
Description	128k X 32 ZBT SRAM, 9 ns, PQFP100
File Size	136.77K / 20 Page	View it Online	Download Datasheet

				Cypress Semiconductor Corp.
Part No.	CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY7C1141V18-300BZI CY7C1143V18-300BZI CY7C1145V18-300BZI CY7C1156V18-300BZI CY7C1141V18-300BZXC CY7C1143V18-300BZXI CY7C1145V18-300BZXI CY7C1145V18-300BZXC CY7C1143V18-300BZXC CY7C1141V18-300BZXI CY7C1143V18-300BZC CY7C1156V18-300BZXI CY7C1156V18-300BZXC CY7C1145V18-300BZC CY7C1141V18-300BZC CY7C1156V18-300BZC
OCR Text	...ss Register 17 A(16:0) 128k x 36 Array 128k x 36 Array 128k x 36 Array 128k x 36 Array K K CLK Gen. Control Logic RPS DOFF VREF WPS BWS[3:0] Read Data Reg. 144 Control Logic 72 72 Reg. Reg. 36 Reg. 36 ...
Description	18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
File Size	948.50K / 28 Page	View it Online	Download Datasheet

				Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
Part No.	CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY7C1161V18-300BZI CY7C1161V18-333BZI CY7C1163V18-300BZI CY7C1163V18-300BZC CY7C1165V18-300BZXC CY7C1165V18-333BZXC CY7C1165V18-333BZC CY7C1165V18-333BZI CY7C1165V18-333BZXI CY7C1165V18-300BZI CY7C1165V18-300BZC CY7C1165V18-300BZXI CY7C1163V18-333BZI CY7C1176V18-333BZXI CY7C1176V18-300BZXI CY7C1176V18-300BZC CY7C1163V18-300BZXC
OCR Text	...ss Register 17 A(16:0) 128k x 36 Array 128k x 36 Array 128k x 36 Array 128k x 36 Array K K CLK Gen. Control Logic RPS DOFF VREF WPS BWS[3:0] Read Data Reg. 144 Control Logic 72 72 Reg. Reg. 36 Reg. 36 ...
Description	18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
File Size	949.91K / 29 Page	View it Online	Download Datasheet

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