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  0.0049 Datasheet PDF File

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    2SC5369

NEC
Part No. 2SC5369
OCR Text ...ENSION (in mm) 2.10.1 1.250.1 0.2 -0 +0.1 1 0.65 0.65 2.00.2 1.3 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 0.90.1 PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector ...
Description NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION

File Size 70.59K  /  12 Page

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    2SC5419

Matsshita / Panasonic
Panasonic Semiconductor
Part No. 2SC5419
OCR Text 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. 0.2 s Absol...
Description Silicon NPN triple diffusion planer type(For low-frequency output amplification)
Transistor

File Size 38.58K  /  2 Page

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    panasonic
Part No. 2SC5419
OCR Text 0.7 6.90.1 4.0 2.50.1 (0.8) (1.0) (0.2) 4.50.1 s Features * High collector to emitter voltage VCEO * High transition frequency fT * Allowing supply with the radial taping 0.65 max. (1.0) s Absolute Maximum Ratings Ta =...
Description MT-2-A1
From old datasheet system

File Size 51.30K  /  3 Page

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    2SC5433 2SC5433-T1

NEC[NEC]
Part No. 2SC5433 2SC5433-T1
OCR Text ...old thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5007 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 1.4 0.1 (0.9) 0.45 0.45 0.2 +0.1 -0 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Collecto...
Description Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

File Size 58.13K  /  8 Page

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    2SC5435

NEC Corp.
Part No. 2SC5435
OCR Text ...old thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5010 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 1.4 0.1 (0.9) 0.45 0.45 0.2 +0.1 -0 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Collecto...
Description High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

File Size 57.92K  /  8 Page

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    2SC5541

Sanyo Semicon Device
Part No. 2SC5541
OCR Text ...lim flat-lead package. (1.4mm x 0.8mm x 0.6mm) Package Dimensions unit:mm 2159 [2SC5541] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector...
Description NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 42.86K  /  5 Page

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    2SC5812

HITACHI[Hitachi Semiconductor]
Part No. 2SC5812
OCR Text 0 Nov. 2001 Features * High power gain, Low noise figure at low power operation: |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "W...
Description Silicon NPN Transistor
Silicon NPN Epitaxial VHF/UHF wide band amplifier

File Size 89.67K  /  10 Page

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    Matsshita / Panasonic
Part No. 2SD1030 0333
OCR Text 0.3 +0.2 s Features q q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 +0.2 1.1 -0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current ...
Description Transistor
From old datasheet system

File Size 45.71K  /  3 Page

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    2SD1047

Wing Shing Computer Components
Part No. 2SD1047
OCR Text ...t) Test Condition IC=5 mA IE=0 IC=10 mA RBE= IE=5mA IC=0 VCB=100V IE=0 VEB=4V IC=0 VCE=5V IC=1A VCE=5V IC=5A IC=5A IB=0.5A Min 200 140 6 Typ Max Unit V V V mA mA 55 50 0.1 0.1 160 2.0 V Wing Shing Computer Compone...
Description NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

File Size 45.87K  /  1 Page

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    hitachi
Part No. 2SD1137
OCR Text ...- -- Max -- -- 100 50 250 350 1.0 V Unit V V A A Test conditions I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCE = 80 V, RBE = VEB = 3.5 V, IC = 0 VCE = 4 V I C = 0.5 A*1 I C = 50 mA I C = 1 A, IB = 0.1 A Collector to emitter breakdown V(BR)CEO...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 29.62K  /  4 Page

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