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  0.0038 Datasheet PDF File

For 0.0038 Found Datasheets File :: 3720    Search Time::23.89ms    
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    Matsshita / Panasonic
Part No. 2SB1488
OCR Text 0.15 6.90.1 0.7 4.0 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 s Features q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25...
Description Transistor

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    panasonic
Part No. 2SB1488
OCR Text 0.7 6.90.1 4.0 (1.0) (0.2) 4.50.1 2.50.1 (0.8) (0.5) q q q 14.50.5 q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. 0.45+0.10 -...
Description MT-2-A1

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    Sanyo
Part No. 2SB1507 2SD2280
OCR Text ...aturation voltage : VCE(sat)=(-)0.4V max. * Wide ASO and highly registant to breakdown. * Micaless package facilitating easy mounting. ( ) : 2SB1507 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Vol...
Description PNP Epitaxial Planar Silicon Transistors 50V/7A High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

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    Sanyo
Part No. 2SB1508 2SD2281
OCR Text ... saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. * Wide ASO and highly registant to breakdown. * Micaless package facilitating easy mounting. ( ) : 2SB1508 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Col...
Description PNP Epitaxial Planar Silicon Transistors 50V/12A High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

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    Matsshita / Panasonic
Part No. 2SC1509
OCR Text ... (Ta=25C) Ratings 80 80 5 1 0.5 1 150 -55 ~ +150 Unit V V V A A W C C 0.45-0.1 1.27 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collect...
Description Transistor

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    panasonic
Part No. 2SC1509
OCR Text ... 25 W to 30 W output amplifier 0.70.1 Unit: mm 5.90.2 4.90.2 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector c...
Description TO-92L-A1

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    hitachi
Part No. 2SC23962SC25432SC2544 2SC2396
OCR Text ...IEBO 1 2SC2543 Max -- -- -- 0.1 0.1 Min 90 90 5 -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 -- -- -- 0.1 0.1 1200 0.2 -- -- -- 2SC2544 Min 120 120 5 -- -- 250 -- -- -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 -- -- -- 0.1 0.1 800...
Description Silicon NPN Epitaxial
From old datasheet system

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    Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. 2SC2585
OCR Text ... O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V IC = 20 mA IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz ...
Description NPN SILICON RF TRANSISTOR X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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    Matsshita / Panasonic
Part No. 2SC2590
OCR Text ...tallation to the heat sink 8.0+0.5 -0.1 3.160.1 3.80.3 11.00.5 3.20.2 1.90.1 0.750.1 4.60.2 0.50.1 0.50.1 1.760.1 2.30.2 3 I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter vol...
Description Power Transistors

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    Matsshita / Panasonic
Part No. 2SC2631
OCR Text ...ctor output capacitance Cob. 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 V mA mA mW C C 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Coll...
Description Transistor

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