...1.5 20 150 150 -55 to +150 Unit v v v mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector cutoff current Symbol I CBO I CEO E...250 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A Test conditions vCB = 15 v, IE = 0 vCE = 8 v, RBE = vEB ...
...1.5 50 150 150 -55 to +150 Unit v v v mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector...250 1.1 -- -- -- 2.0 pF GHz dB dB dB Unit v A mA A Test conditions I C = 10 A, IE = 0 vCB = 12 v, IE...
...1.5 50 100 150 -55 to +150 Unit v v v mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector...250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit v A mA A Test conditions I C = 10 A, IE = 0 vCB = 12 v, I...
...1.5 20 150 150 -55 to +150 Unit v v v mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector cutoff current Symbol I CBO I CEO E...250 DC Current Transfer Ratio h FE vCE = 5v DC Current Transfer Ratio vs. Collector Current
200
...
...20 5 30 400 150 -55 ~ +150 Unit v v v mA mW C C
13.50.5
5.10.2
0.45 -0.1 1.27
+0.2
0.45 -0.1
1.27
+0.2
123
2.30.2
...250 MHz pF typ max Unit v v v
*h
FE
Rank classification
B 70 ~ 160 C 110 ~ 250 hFE
Ran...
... 100 50 300 150 -55 ~ +150 Unit v
1.27
13.50.5
High foward current transfer ratio hFE. Low collector to emitter saturation voltage vC...250 vCE=10v
fT -- I E
vCB=10v Ta=25C
Forward current transfer ratio hFE
1500
Transition...
... 100 50 200 150 -55 ~ +150 Unit v v v mA mA mW C C
1:Base 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:SC-59 Mini Type Package
Marking s...250 vCE=10v
fT -- I E
vCB=10v Ta=25C
Forward current transfer ratio hFE
1500
Transition...
Description
Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 v, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
... 1.5 1 150 -55 ~ +150 1cm2 Unit v v v A A W C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Symbol vCBO vCEO vEBO ICP IC PC* Tj Tstg
...250
Transition frequency fT (MHz)
1 3 10
30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75...
Description
Silicon NPN epitaxial planer type(For low-frequency power amplification)
... 5 3 1 150 -55 ~ +150 1cm2 Unit v v v A A W C C
1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package
marking
Symbol vCBO vCE...250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100
Cob -- vCB
Collector output capacitance Cob (...
Description
Silicon NPN epitaxial planer type(For low-frequency power amplification0
... 1.8 40 150 -45 to +150
Unit v v v A A W W C C
2SD1137
Electrical Characteristics (Ta = 25C)
Item Symbol Min 100 4 -- -- 50 25 Colle...250 350 1.0 v Unit v v A A Test conditions I C = 10 mA, RBE = I E = 1 mA, IC = 0 vCE = 80 v, RBE = ...