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For probability Found Datasheets File :: 5625 Search Time::1.141ms
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				MOTOROLA
Part No.	MRF6S19100N
OCR Text	....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Bandwidth * Capable of Handling 5:1 VS...
Description	MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
File Size	613.04K / 16 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MRF6S19140H
OCR Text	....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.5% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of H...
Description	MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
File Size	435.04K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc MOTOROLA
Part No.	MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1
OCR Text	... 3.84 MHz. PAR = 8.5 dB @ 0.01% probability Power Gain -- 15.5 dB Drain Efficiency -- 15% IM3 @ 10 MHz Offset -- - 47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 49 dBc in 3.84 MHz Channel Bandwidth * Typical Single - Carrier...
Description	RF Power Field Effect Transistors The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
File Size	572.02K / 24 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MRF6S21100N
OCR Text	... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR,...
Description	MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
File Size	670.29K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc MOTOROLA
Part No.	MRF6S23100H MRF6S23100HR306 MRF6S23100HR3 MRF6S23100HSR3
OCR Text	... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 15.4 dB Drain Efficiency -- 23.5% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 40.5 dBc @ 3.84 MHz Channel Bandwidth * Capable of Ha...
Description	RF Power Field Effect Transistors 2300??400 MHz, 20 W Avg., 28 V, 2 x W??DMA Lateral N??hannel RF Power MOSFETs
File Size	421.40K / 12 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MHV5IC2215NR2
OCR Text	....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 27.5 dB ACPR @ 885 kHz Offset -- - 60 dBc in 30 kHz Bandwidth * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Fu...
Description	2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
File Size	578.93K / 16 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S19100HR3 MRF6S19100HSR3
OCR Text	....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 16.1 dB Drain Efficiency -- 28% IM3 @ 2.5 MHz Offset -- - 37 dBc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc @ 30 kHz Channel Bandwidth * Capable of Han...
Description	RF Power Field Effect Transistors
File Size	399.25K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFG35010ANT1
OCR Text	... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 10 dB Efficiency -- 25% ACPR @ 5 MHz Offset -- - 43 dBc in 3.84 MHz Channel Bandwidth * 9 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Characteristi...
Description	Gallium Arsenide PHEMT
File Size	245.93K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G22LS-40BN
OCR Text	...64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz 1.2 features and benefits ? typical 2-carrier w-cdma performance at frequencies of 2110 mhz and 2170 mhz, a supply voltage of 28 v and an i dq of 345 ...
Description	Power LDMOS transistor
File Size	254.31K / 13 Page	View it Online	Download Datasheet

For probability Found Datasheets File :: 5625 Search Time::1.141ms
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