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Atmel, Corp.
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| Part No. |
K8P2815UQB-DC4C0
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| OCR Text |
...locks with independent hardware pro- tection. this block architecture provides highly flexible erase and program capability. the k8 p2815uqb nor flash consists of four banks. this device is capable of reading data from one bank while prog... |
| Description |
8M X 16 FLASH 2.7V PROM, 65 ns, PBGA64 13 X 11 MM, 1 MM PITCH, FBGA-80/64
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| File Size |
871.83K /
56 Page |
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Macronix International Co., Ltd.
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| Part No. |
MX29LV008TTC-90 MX29LV008TTI-90 MX29LV008TTC-70
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| OCR Text |
...high reliability erase and auto pro- gram/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data... |
| Description |
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
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| File Size |
480.36K /
52 Page |
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it Online |
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LINEAR TECHNOLOGY CORP
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| Part No. |
LTC4267CDHC
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| OCR Text |
...urrent source, thermal overload pro- tection, signature disable and power good signal along with an undervoltage lockout optimized for use with the ieee- required diode bridge. the precision dual level input current limit allows the ltc42... |
| Description |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
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| File Size |
1,979.35K /
32 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G
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| OCR Text |
...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. macronix nbit tm memory family
2 p/n:pm1118 mx26lv040 rev. 1.0, nov. 08, 2004 pin configurations table ... |
| Description |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
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| File Size |
593.43K /
40 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
MX29LV640TXBI-90 MX29LV640TXBI-12 MX29LV640BXBI-12 MX29LV640BXBI-90 MX29LV640TXCI-90 MX29LV640TTC-12G MX29LV640TTI-12G MX29LV640BXBC-12 MX29LV640BTC-90G
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| OCR Text |
... protected, it is prohibited to pro- gram or erase within the sector again. ? latch-up protected to 250ma from -1v to vcc + 1v ? low vcc wri...tection is proved for stresses up to 100 milliamperes on address and data pin from -1v to vcc + 1v. ... |
| Description |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
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| File Size |
1,197.96K /
70 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
MX28F640C3TXAC-90 MX28F640C3TTC-12 MX28F640C3TTI-12 MX28F640C3TXAI-12
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| OCR Text |
...high reliability erase and auto pro- gram/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data... |
| Description |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA48
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| File Size |
657.19K /
44 Page |
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it Online |
Download Datasheet |
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