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INTEGRATED SILICON SOLUTION INC
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Part No. |
IS41LV8200A-50J
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OCR Text |
...ance cmos dynamic random access memory. these devices offer an accelerated cycle access called edo page mode. edo page mode allows 2,048 random ac- cesses within a single row with access cycle time as short as 20 ns per 4-bit word. these fe... |
Description |
2M X 8 EDO DRAM, 50 ns, PDSO28
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File Size |
126.75K /
20 Page |
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it Online |
Download Datasheet |
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NANYA TECHNOLOGY CORP
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Part No. |
NT5DS64M8AF-6K
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OCR Text |
...ed cmos, dynamic random-access memory containing 536,870,912 bits. it is internally configured as a quad-bank dram. the 512mb ddr sdram uses a double-data-rate architec- ture to achieve high-speed operation. the double data rate architec... |
Description |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
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File Size |
2,293.16K /
76 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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