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Integrated Silicon Solution, Inc.
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| Part No. |
IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50KI IS41LV16100A-60TL
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| OCR Text |
... i/o11 i/o10 i/o9 i/o8 nc lcas uca s oe a9 a8 a7 a6 a5 a4 gnd pin descriptions a0-a9 address inputs i/o0-15 data inputs/outputs we write enable oe output enable ras row address strobe ucas upper column address strobe lcas lower c... |
| Description |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
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| File Size |
144.86K /
22 Page |
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it Online |
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Cypress Semiconductor, Corp.
ITT, Corp.
STMicroelectronics N.V.
Micrel Semiconductor, Inc.
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| Part No. |
IC41LV16100S-50TI IC41LV16100S-60TI IC41C16100S-45K IC41LV16100S-45K
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| OCR Text |
...cas upper column address strobe lcas lower column address strobe vcc power gnd ground nc no connection 1 2 3 4 5 6 7 8 9 10 11 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 36 35 34 33 32 31 30 29 28 27 26 v cc i/o0 i/o1... |
| Description |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 100万166兆）动态与江户页面模式内存
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 100万1616兆）动态与江户页面模式内存
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| File Size |
674.69K /
21 Page |
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it Online |
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SIEMENS AG
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| Part No. |
HYB5116160BSJ-50
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| OCR Text |
...cas upper column address strobe lcas lower column address strobe we read/write input v cc power supply (+ 5 v) v ss ground (0 v) n.c. not connected
semiconductor group 3 hyb 5116160bsj-50/-60/-70 1m x 16-dram pin configuration truth table... |
| Description |
1M x 16-Bit Dynamic RAM 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
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| File Size |
274.50K /
24 Page |
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it Online |
Download Datasheet |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS41C16100S-45K IS41C16100S-45T IS41C16100S-50T
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| OCR Text |
...12 gnd i/o11 i/o10 i/o9 i/o8 nc lcas ucas oe a9 a8 a7 a6 a5 a4 gnd pin descriptions a0-a9 address inputs i/o0-15 data inputs/outputs we write enable oe output enable ras row address strobe ucas upper column address strobe lcas lower column ... |
| Description |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 100万166兆）动态与江户页面模式内存
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| File Size |
534.25K /
20 Page |
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it Online |
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Alliance Semiconductor, Corp.
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| Part No. |
AS4C256K16E0-30JC AS4C256K16E0-35JC
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| OCR Text |
...0 29 28 27 26 25 24 23 22 21 nc lcas ucas oe a8 a7 a6 a5 a4 gnd 1 2 3 4 5 6 7 8 9 10 vcc i/o0 i/o1 i/o2 i/o3 vcc i/o4 i/o5 i/o6 i/o7 11 12 13 14 15 16 17 18 19 20 nc nc we ras nc a0 a1 a2 a3 vcc v cc i/o0 i/o1 i/o2 i/o3 v cc i/o4 i/o5 i/o6 ... |
| Description |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM（江户）
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| File Size |
521.73K /
24 Page |
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it Online |
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Hynix Semiconductor, Inc.
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| Part No. |
GM71V18163CJ-6E
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| OCR Text |
.../o8 nc 32 33 34 35 36 v ss 37 / lcas / ucas / oe 29 30 31 a9 a8 a7 26 27 28 a6 a5 a4 23 24 25 v ss 22 v cc i/o0 i/o1 i/o2 i/o3 1 2 3 4 5 i/o4 i/o5 i/o6 i/o7 nc 7 8 9 10 11 v cc 6 nc / we / ras 12 13 14 nc nc a0 15 16 17 a1 a2 a3 18 19 20 v ... |
| Description |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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| File Size |
91.14K /
11 Page |
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it Online |
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