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				MICRON[Micron Technology]
Part No.	MT4LC8M8C2DJ-5 MT4LC8M8C2DJ-6 MT4LC8M8C2TG-5 MT4LC8M8C2TG-6 MT4LC8M8P4 MT4LC8M8P4DJ-5 MT4LC8M8P4DJ-6 MT4LC8M8P4TG-5 MT4LC8M8P4TG-6
OCR Text	...en LOW prior to CAS# falling. A late WRITE or READ-MODIFY-WRITE occurs when WE# falls after CAS# is taken LOW. During EARLY WRITE cycles, the data outputs (Q) will remain High-Z, regardless of the state of OE#. During late WRITE or READ-MOD...
Description	DRAM
File Size	385.09K / 22 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8160ZV18CT-333I GS8160ZV36CGT-333I GS8160ZV18CGT-333I GS8160ZV36CT-333I GS8160ZV36CGT-300 GS8160ZV36CGT-250 GS8160ZV36CT-250I
OCR Text	...or other pipelined read/double late write or flow through read/ single late write srams, allow u tilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write...
Description	18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 4.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 4.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100
File Size	438.25K / 22 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8161FZ18BGD-6.5 GS8161FZ18BGD-6.5I GS8161FZ32BGD-6.5I GS8161FZ36BGD-6.5 GS8161FZ36BGD-7.5I GS8161FZ32BGD-5.5I GS8161FZ18BGD-5.5I GS8161FZ32BGD-7.5I GS8161FZ36BD-5.5 FZ36BD-5.5I
OCR Text	... other flow through read/single late write srams, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. because it is a synchronous dev...
Description	18Mb Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 6.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 5.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165 18Mb Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PBGA165
File Size	622.97K / 28 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT4C4M4B1D MT4C4M4B1T MT4C4M4A1D MT4C4M4A1T MT4LC4M4B1TG-6S MT4LC4M4B1 MT4C4M4B1TG-6S MT4C4M4B1TG-6 MT4C4M4B1DJ-6 MT4C4M4B1 MT4C4M4A1TG-6 MT4C4M4A1TG-6S MT4C4M4A1 MT4C4M4A1DJ-6 MT4C4M4A1DJ-6S MT4C4M4AX MT4C4M4B1DJ-6S MT4C4M4BX MT4LC4M4A1 MT4LC4M4A1DJ-6 MT4LC4M4A1DJ-6S MT4LC4M4A1TG-6 MT4LC4M4B1DJ-6 MT4LC4M4B1DJ-6S MT4LC4M4B1TG-6
OCR Text	...en LOW prior to CAS# falling. A late WRITE or READ-MODIFY-WRITE occurs when WE# falls after CAS# is taken LOW. During EARLY WRITE cycles, the data outputs (Q) will remain High-Z regardless of the state of OE#. During late WRITE or READ-MODI...
Description	DRAM
File Size	344.61K / 20 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT4C4M4E8T MT4C4M4E9T MT4C4M4E8TG MT4LC4M4E9TGS MT4C4M4E8 MT4C4M4E8DJ MT4C4M4E8DJS MT4C4M4E8TGS MT4C4M4E9 MT4C4M4E9DJ MT4C4M4E9DJS MT4C4M4E9TG MT4C4M4E9TGS MT4C4M4EX MT4LC4M4E8 MT4LC4M4E8DJ MT4LC4M4E8DJS MT4LC4M4E8TG MT4LC4M4E8TGS MT4LC4M4E9 MT4LC4M4E9DJ MT4LC4M4E9DJS MT4LC4M4E9TG
OCR Text	...en LOW prior to CAS# falling. A late WRITE or READ-MODIFY-WRITE occurs when WE# falls after CAS# is taken LOW. During EARLY WRITE cycles, the data outputs (Q) will remain High-Z regardless of the state of OE#. During late WRITE or READ-MODI...
Description	4 MEG x 4 EDO DRAM
File Size	288.67K / 23 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170DW36C-333 GS8170DW72C-200 GS8170DW72C-250 GS8170DW72C-300 GS8170DW72C-333 GS8170DW36C-300I GS8170DW36C-333I GS8170DW36C-250I GS8170DW36C-200I GS8170DW72C-333I GS8170DW72C-200I
OCR Text	late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.5 V or 1.8 V CMOS Interface * ZQ controlled user-selectable output drive strength * Dual Cycle Deselect * Burst R...
Description	18Mb B>1x1Dp CMOS I/O Double late Write SigmaRAM 18Mb x1Dp CMOS I/O Double late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
File Size	820.65K / 27 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8170DW72AC-250 GS8170DW36AC-333 GS8170DW36AC-300 GS8170DW36AGC-350 GS8170DW72AGC-350 GS8170DW36AGC-350I GS8170DW72AGC-350I GS8170DW36AC-350I GS8170DW72AC-350I GS8170DW72AGC-333 GS8170DW36AGC-333I GS8170DW36AC-333I GS8170DW72AC-333I GS8170DW36AC-250I GS8170DW36AGC-250I GS8170DW72AC-250I GS8170DW36AGC-300I GS8170DW72AC-300I GS8170DW36AC-300I GS8170DW72AGC-300
OCR Text	late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.8 V CMOS Interface * ZQ controlled user-selectable output drive strength * Dual Cycle Deselect * Burst Read and W...
Description	18Mb B>1x1Dp CMOS I/O Double late Write SigmaRAM 18Mb x1Dp CMOS I/O Double late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb x1Dp CMOS I/O Double late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 18Mb x1Dp CMOS I/O Double late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM 18Mb x1Dp CMOS I/O Double late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
File Size	761.08K / 32 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT4C16270
OCR Text	...prior to either CAS# falling. A late WRITE or READ-MODIFY-WRITE occurs when WE falls after CAS# (CASL# or CASH#) was taken LOW. During EARLY WRITE cycles, the data-outputs (Q) will remain High-Z regardless of the state of OE#. During late W...
Description	DRAM 256K X 16 DRAM 5V, EDO PAGE MODE DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
File Size	275.27K / 22 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS8162Z72CC-150V GS8162Z72CC-150IV GS8162Z72CGC-200V GS8162Z72CC-200IV
OCR Text	...or other pipelined read/double late write or flow through read/ single late write srams, allow u tilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write...
Description	18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209 18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
File Size	765.31K / 27 Page	View it Online	Download Datasheet

				ETC GSI[GSI Technology]
Part No.	GS8330DW36 GS8330DW36-200 GS8330DW72C GS8330DW36-250 GS8330DW72C-200 GS8330DW72C-250 GS8330DW36C-250 GS8330DW36C-200 GS8330DW36C-250I GS8330DW36C-200I GS8330DW72C-250I GS8330DW72C-200I GS8330DW72
OCR Text	late Write SigmaRAMTM 200 MHz-250 MHz 1.8 V VDD 1.8 V I/O Features * Double late Write mode, Pipelined Read mode * JEDEC-standard SigmaRAMTM pinout and package * 1.8 V +150/-100 mV core power supply * 1.8 V CMOS Interface * ZQ contro...
Description	36Mb Common I/O SigmaRAMs Double late Write SigmaRAM
File Size	579.81K / 30 Page	View it Online	Download Datasheet

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