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For id-3.0a Found Datasheets File :: 5465 Search Time::1.078ms
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				International Rectifier
Part No.	IRFR9120NPBF IRFU9120NPBF IRFR9120NTR IRFR9120NTRLPBF IRFR9120NTRR IRFR9120NTRRPBF IRFR9120NPBF-15
OCR Text	... -100V RDS(on) = 0.48 G S ID = -6.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing...3.1 50 110 Units C/W www.irf.com 1 12/14/04 IRFR/U9120NPbF Electrical Characteristics...
Description	6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA 6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48Ω , ID = -6.6A ) HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A ) ULTRA LOW ON RESISTANCE
File Size	256.09K / 11 Page	View it Online	Download Datasheet

				AUK corp
Part No.	STK0160I
OCR Text	... (Tc=25C) Symbol VDSS VGSS ID (Tc=25) (Tc=125) IDP PD IAS EAS IAR EAR TJ Tstg Rating 600 30 1.0 0.77 4.0 28 1.0 22 1.0 2.5 150 ...3 Unit /W KSD-T6Q001-000 2 STK0160I Electrical Characteristics Characteristic Drain-...
Description	Advanced Power MOSFET
File Size	359.84K / 8 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STN1810
OCR Text	... (tj=150 ) ta=25 ta=70 id 8.0 6.0 a pulsed drain current idm 12 a continuous source current (diode conduction) is 2.3 a power dissipation ta=25 ta=70 pd 2.8 1.8 w operation junction temperature tj 150 ...
Description	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
File Size	958.14K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7309 IRF7309TR IRF7309PBF
OCR Text	...m Ratings Parameter N-Channel ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, V...3.2 16 1.4 0.011 20 6.9 -55 to + 150 -6.0 Max. P-Channel -3.5 -3.0 -2.4 -12 Units A A A A W...
Description	30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	161.00K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7311
OCR Text	...rrent TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 20 12 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximu...
Description	HEXFET Power MOSFET
File Size	154.76K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7313 IRF7313TR
OCR Text	...erwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA...3 82 4.0 0.20 5.8 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter M...
Description	30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	542.53K / 7 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STN4480
OCR Text	... (tj=150 ) ta=25 ta=70 id 14.0 10.0 a pulsed drain current idm 70 a continuous source current (diode conduction) is 4.0 a power dissipation ta=25 ta=70 pd 3.1 2.0 w operation junction temperature tj 150...
Description	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
File Size	744.55K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7317
OCR Text	...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 100 4.1 0.20 5.0 -5.0 -55 to + 150 C N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 150 -2.9 Maximum P-Channel -20 12 -5.3 -4.3 -21 -2.5 Units V Pulsed Drain Current C...
Description	6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA HEXFET Power MOSFET
File Size	147.74K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7319
OCR Text	...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 82 4.0 0.20 5.0 -5.0 -55 to + 150 C N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 140 -2.8 Maximum P-Channel -30 20 -4.9 -3.9 -30 -2.5 Units V Pulsed Drain Current Co...
Description	HEXFET Power MOSFET HEXFET?? Power MOSFET
File Size	128.05K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7328 IRF7328TR
OCR Text	...m@VGS = -10V 32m@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET(R) Power MOSFETs from International Rectifier utilize adva...3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C I...
Description	HEXFET Power MOSFET -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	106.75K / 8 Page	View it Online	Download Datasheet

For id-3.0a Found Datasheets File :: 5465 Search Time::1.078ms
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