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  doherty Datasheet PDF File

For doherty Found Datasheets File :: 137    Search Time::1.141ms    
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    MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3

Freescale Semiconductor, Inc
Part No. MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3
OCR Text ...ass c operation ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs -...
Description RF Power Field Effect Transistors

File Size 391.04K  /  14 Page

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    MRF8S9202N

Freescale Semiconductor, Inc
Part No. MRF8S9202N
OCR Text ...rection systems ? optimized for doherty applications ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--sourc...
Description RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET

File Size 644.74K  /  13 Page

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    MRFE6S9135HSR3 MRFE6S9135HR3

Freescale Semiconductor, Inc
Part No. MRFE6S9135HSR3 MRFE6S9135HR3
OCR Text ... ESD Protection * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9135HR3 MRFE6S9135HSR3 940 MHz, 39 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER ...
Description N-Channel Enhancement-Mode Lateral MOSFETs

File Size 437.73K  /  12 Page

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    AFT21S232SR3 AFT21S230SR3

Freescale Semiconductor, Inc
Part No. AFT21S232SR3 AFT21S230SR3
OCR Text ...rection systems ? optimized for doherty applications ? ni--780s--6: r3 suffix = 250 units, 32 mm tape width, 13 inch reel. ? ni--780s--2: r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel options, see p. 18. figure...
Description RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 561.02K  /  15 Page

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    PTFB211803EL PTFB211803FL

Infineon Technologies AG
Part No. PTFB211803EL PTFB211803FL
OCR Text ...ge for improved performance in doherty amplifers ? integrated esd protection. ? capable of handling 10:1 vswr @ 30 v, 180 w (cw) output power ? pb-free and rohs compliant ptfb211803fl h-34288-4/2 data sheet 2 of 14 rev. 05,...
Description Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz

File Size 490.86K  /  14 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22LS-40P BLF6G22L-40P
OCR Text ...nce for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding ...
Description Power LDMOS transistor BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;

File Size 151.37K  /  16 Page

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    PTFB191501E PTFB191501F

Infineon Technologies AG
Part No. PTFB191501E PTFB191501F
OCR Text ...nge for improved performance in doherty peaking amplifiers ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 150 w (cw) output power ? pb-fr...
Description Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz

File Size 288.13K  /  15 Page

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    PTFB193404F

Infineon Technologies AG
Part No. PTFB193404F
OCR Text ...ge for improved performance in doherty ampli? ers ? capable of handling 10:1 vswr @ 30 v, 340 w (cw) output power ? integrated esd protection ? excellent thermal stability ? pb-free and rohs compliant ptfb193404f package h-37275-...
Description Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz

File Size 248.84K  /  14 Page

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    PTFB211503EL PTFB211503FL

Infineon Technologies AG
Part No. PTFB211503EL PTFB211503FL
OCR Text ... for improved performance in doherty peaking amplifers ? integrated esd protection ? capable of handling 10:1 vswr @ 30 v, 150 w (cw) output power ? pb-free and rohs compliant ptfb211503fl h-34288-4/2 data sheet 2 of 14 re...
Description Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz

File Size 505.51K  /  14 Page

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    PTFB212503EL PTFB212503FL

Infineon Technologies AG
Part No. PTFB212503EL PTFB212503FL
OCR Text ... for improved performance in doherty peaking amplifers ? integrated esd protection: human body model, class 2 (minimum) ? capable of handling 10:1 vswr @ 30 v, 240 w (cw) output power ? pb-free, rohs-compliant ptfb212503fl packag...
Description Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

File Size 511.41K  /  14 Page

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For doherty Found Datasheets File :: 137    Search Time::1.141ms    
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