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  cool-tm Datasheet PDF File

For cool-tm Found Datasheets File :: 238    Search Time::1.547ms    
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    MGSF3442VT1 MGSF3442VT1_D ON1902 ON1901

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MGSF3442VT1 MGSF3442VT1_D ON1902 ON1901
OCR Text ...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system

File Size 138.26K  /  6 Page

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    V5.5MLA020133NR V5.5MLA020147NR V5.5MLA020164NR

Littelfuse
Part No. V5.5MLA020133NR V5.5MLA020147NR V5.5MLA020164NR
OCR Text .... the boards must be allowed to cool gradually to less than 50o c before cleaning. leadCfree (pb-free) soldering recommendations maximum temperature 260?c, time within 5?c of peak 20 seconds maximum preheat zone ramp rate <3?c/s 60 - 150 s...
Description Surface Mount Multilayer Varistors (MLVs)

File Size 128.69K  /  3 Page

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    MGSF3442XT1 MGSF3442XT1_D ON1904 ON1903

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MGSF3442XT1 MGSF3442XT1_D ON1904 ON1903
OCR Text ...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system

File Size 82.92K  /  4 Page

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    MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1905

ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA INC
Part No. MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1905
OCR Text ...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system

File Size 121.17K  /  6 Page

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    DRD2960Y35 DRD2960Y38 DRD2960Y36 DRD2960Y37 DRD2960Y39

Dynex Semiconductor
Part No. DRD2960Y35 DRD2960Y38 DRD2960Y36 DRD2960Y37 DRD2960Y39
OCR Text ...st be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature produc t failure. use outside the product rating...
Description    Rectifier Diode

File Size 236.56K  /  7 Page

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    MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1907

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1907
OCR Text ...the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanica...
Description From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors

File Size 134.23K  /  6 Page

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For cool-tm Found Datasheets File :: 238    Search Time::1.547ms    
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