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Cystech Electonics Corp...
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| Part No. |
MTB011N10RQ8 MTB011N10RQ8-0-T3-G
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| OCR Text |
... v gs = 2 20v - - 1 v ds =80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 7.5 11 v gs =10v, i d =11.5a *r ds(on) - 9.8 14 m v gs =4.5v, i d =9.5a dynamic qg *1, 2 - 69.2 - qgs *1, ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
430.07K /
9 Page |
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Shenzhen Taychipst Electronic Co., Ltd
Shenzhen Taychipst Elec...
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| Part No. |
MBRX0520 MBRX05100 MBRX0530 MBRX0580 MBRX0540 MBRX0560
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| OCR Text |
...--- 60v 42v 60v mbrx0580 ------ 80v 56v 80v mbrx05100 ------ 100v 70v 100v maximum dc blocking voltage mcc catalog number device marking max...5a t j =90 o c peak forward surge current i fsm 20a 8.3ms half sine maximum instantaneous forward vo... |
| Description |
Schottky Rectifier
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| File Size |
1,941.75K /
2 Page |
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it Online |
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Inchange Semiconductor ...
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| Part No. |
BUX77
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| OCR Text |
...ng voltage- : v ceo(sus) = 80v(min) applications designed for use in switching regulators and general purpose power amplifiers...5a; i b = 0.5a 1.0 v v be( on ) base-emitter on voltage i c = 5a; i b = 0.5a 1.3 v i ce... |
| Description |
isc Silicon NPN Power Transistor
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| File Size |
207.34K /
2 Page |
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it Online |
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Infineon
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| Part No. |
SPU11N10
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| OCR Text |
...se diode dv/dt
IS =10.5a, VDS =80v, di/dt=200A/s, Tjmax =175C
Gate source voltage Power dissipation
TC=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-03-16
Target data sheet Thermal C... |
| Description |
Low Voltage MOSFETs - Power MOSFET, 100V, I-PAK, RDSon=179mOhm, 11A, NL
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| File Size |
475.53K /
4 Page |
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it Online |
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