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  6.2ghz Datasheet PDF File

For 6.2ghz Found Datasheets File :: 1589    Search Time::3.578ms    
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    FMM5046VF

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
Part No. FMM5046VF
OCR Text ... 2.2 -10dBm -2dBm 2.0 1.8 1.6 1.4 1.2 -10 -8 -6 -4 -2 0 2 4 6 8 10 IDS(RF) (A) 22 20 2.3 Input Power (dBm) Frequency (GHz) 2 FMM5046VF GaAs MMIC S11 S22 +j100 2.0 1.9 1.8 2.1 2.2 2.5 +j50 +j25 +90 S21 S12 ...
Description From old datasheet system
GaAs MMIC

File Size 111.32K  /  4 Page

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    ISL3690 ISL3690IR ISL3690IR-TK

Intersil, Corp.
Intersil Corporation
Part No. ISL3690 ISL3690IR ISL3690IR-TK
OCR Text ...6 15 10 9 8 7 6 5 4 3 2 LNA_VCC 17 LNA_GND 18 LB_SHIELD 19 BB_OVLD LB_LNA_IN+ 20 LB_LNA_IN- 21 HB_SHIELD 22 HB_LNA_IN+ 23 HB_LNA_IN- 24 HB_SHIELD_2 25 LB_TX_OUT+ 26 Q SELECT LB_TX_OUT- 27 HB_TX_OUT+ 28 HB_TX...
Description Dual Band Direct Conversion Transceiver 双波段直接转换收发器
DIODE ZENER SINGLE 1000mW 7.5Vz 34mA-Izt 0.05 10uA-Ir 5Vr DO41-GLASS 5K/REEL

File Size 32.51K  /  1 Page

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    EPA1200A

Excelics Semiconductor, Inc.
ETC
List of Unclassifed Manufacturers
Part No. EPA1200A
OCR Text ...r FET ' ' ' 6 * 6 * 6 * 6 * 6 * 6 * ELECTRICAL CHARACTERISTICS (Ta = 25 OC...2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power...
Description High Efficiency Heterojunction Power FET

File Size 26.76K  /  2 Page

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    MT4S100T

TOSHIBA[Toshiba Semiconductor]
Part No. MT4S100T
OCR Text ...EO VEBO IC IB PC Tj Tstg Rating 6 3 1.2 15 7 45 150 -55~150 Unit V V V mA mA mW C C TESQ JEDEC JEITA TOSHIBA Weight: 0.0015 g - 1 0...2GHz VCE=2V, IC=10mA, f=2GHz VCE=2V, IC=5mA, f=2GHz Min 19 14 - Typ. 23 17 0.72 Max 1.0 ...
Description UHF LOW NOISE AMPLIFIER APPLICATION

File Size 121.39K  /  5 Page

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    NJG1533KB2

NJRC[New Japan Radio]
Part No. NJG1533KB2
OCR Text ...on Mark KB2 Type Top view 1 2 3 6 5 4 Pin connection 1.P1 2.GND 3.P2 4.VCTL2 5.PC 6.VCTL1 nPACKAGE OUTLINE NJG1533KB2 +2.5~+6.5V 0.4dB typ. @f=1GHz, PIN=23dBm 0.5dB typ. @f=2GHz, PIN=23dBm 29dB typ. @f=2GHz, PIN=23dBm 25dBm max. @f=2G...
Description SPDT SWITCH GaAs MMIC

File Size 159.47K  /  12 Page

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    Agilent(Hewlett-Packard...
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-33143- ATF33143 ATF-33143-BLK ATF-33143-TR1 ATF-33143-TR2
OCR Text ...Temperature Thermal Resistance [6] Units V V V mA mW dBm C C C/W Absolute Maximum 5.5 -5 -5 Idss [3] 600 20 160 -65 to 160 145 Notes: 1. Op...2GHz. 25 Figure 7. OIP3, IIP3 vs. Bias [1] at 900 MHz. 25 20 20 P1dB (dBm) 15 P1...
Description Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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    HP[Agilent(Hewlett-Packard)]
Part No. ATF34143 ATF-34143-TR2 ATF-34143 ATF-34143-BLK ATF-34143-TR1
OCR Text ...lead temperature is 25C. Derate 6 mW/ C for TL > 40C. 5. Thermal resistance measured using 150C Liquid Crystal Measurement method. 6. Under ...2GHz. [1,2] 35 OIP3 Figure 7. Associated Gain vs. Current (Id) and Voltage (V D) at 2 GHz. [1,2...
Description Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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    SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143

Electronic Theatre Controls, Inc.
SIRENZA[SIRENZA MICRODEVICES]
Stanford Microdevices
List of Unclassifed Manufacturers
Part No. SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text ...viation from Lin Phase (degs) 0.6 0.5 0.4 0.3 0.2 0.1 0 1.5 1.7 1.9 2.1 2.3 2.5 100 3.0 3.3 Idd (mA) 105 Delay Dev. Linear Phase 107.5 110 ...2GHz, +40C 30 20 10 TOI P1dB 0 4.0 4.3 4.5 4.8 Vdd (V) 5.0 5.3 5.5 Gain NF (x10) Supply ...
Description 1700-2200 MHz High Linearity Low Noise Amplifier Module

File Size 158.74K  /  7 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text ... screened option Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Input bus bit 8 ...2GHz 10GHz INPUT DRIVE REQUIREMENTS Fig. 3 SP8855E +j1 +j0.5 +j2 Zo = 50 +j0.2 0 1.1G...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

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    TIM1011-2L

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM1011-2L
OCR Text ...Rise IDS2 Tch IDS1 G1dB VDS= 9V 6.5 Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN. TYP. MAX. UNIT 32.5 ...2GHz FREQUENCY (GHz) MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG 10.4 10.8 11....
Description MICROWAVE POWER GaAs FET
From old datasheet system

File Size 142.06K  /  5 Page

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For 6.2ghz Found Datasheets File :: 1589    Search Time::3.578ms    
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