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samsung
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Part No. |
K4S561632E
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OCR Text |
...are stable IO = 0 mA Page burst 4banks Activated. tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Test Condition
CMOS SDRAM
Version -75 80 2 2 20
Unit
Note
ICC1 ICC2P
mA
1
ICC2PS CKE & CLK VIL(max), tCC = ICC2N ICC2NS ICC... |
Description |
IC,SDRAM,4X4MX16,CMOS,TSSOP,54PIN,PLASTIC
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File Size |
119.02K /
14 Page |
View
it Online |
Download Datasheet |
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SAMSUNG
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Part No. |
K4S283232E K4S283232E-TC1L K4S283232E-TC60
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OCR Text |
...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L 800
mA
Operating Current (Burst Mode) Refresh Current Self Refresh Current
ICC4
120
95
90
mA
1
ICC5 ICC6
200
180 2 80... |
Description |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 4Mx32 SDRAM
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File Size |
101.55K /
11 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K4S563233F K4S563233FHN K4S563233FHN75
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OCR Text |
...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) -E/C -N/L
Active Standby Current in non power-down mode (One Bank Active)
ICC3NS
20
mA
Operating Current (Burst Mode)
ICC4
120
100
90
... |
Description |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
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File Size |
138.59K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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