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  20v 8a Datasheet PDF File

For 20v 8a Found Datasheets File :: 4096    Search Time::0.781ms    
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    CD4069UBMS FN3321

INTERSIL[Intersil Corporation]
Part No. CD4069UBMS FN3321
OCR Text 20v Rating) * Standardized Symmetrical Output Characteristics * Medium Speed Operation: tPHL, tPLH = 30ns (typ) at 10V * 100% Tested for Qui...8a 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, LIMITS TEMPERATURE +25oC +125 oC PARAMETER S...
Description Inverter, Hex. (Unbuffered), Rad-Hard, CMOS, Logic
CMOS Hex Inverter
From old datasheet system

File Size 93.10K  /  8 Page

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    SPP2345

SYNC POWER Crop.
Part No. SPP2345
OCR Text ...pin configuration(sot-23) ? -20v/-3.3a,r ds(on) = 70m ? @v gs =-4.5v ? -20v/-2.8a,r ds(on) = 85m ? @v gs =-2.5v ? -20v/-2.3a,r ds(on) =110m ? @v gs =-1.8v ? super high density cell design for extremely low r ds (on) ? excep...
Description P-Channel Enhancement Mode MOSFET

File Size 226.58K  /  8 Page

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    FS16KM-9

Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS16KM-9
OCR Text ...w t c = 25? pulse test v gs = 20v 6v 5v 4v 10v 20 16 12 8 4 0 0 4 8 12 16 20 5v 4v p d = 40w v gs =20v 10v 6v t c = 25? pulse test po...8a 40 32 24 16 8 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 10 3 7 5 3 2 10 1 10 0 23 5710 1...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 52.33K  /  4 Page

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    SCG4153 SCG4153-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SCG4153 SCG4153-15
OCR Text ... bauelemente scg4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 1 of 4 n3 = date code rohs compliant product a suffix of -c specifies halogen...
Description N-Channel Enhancement Mode MOSFET

File Size 678.51K  /  4 Page

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    Infineon
Part No. SGI02N120
OCR Text ...urrent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =2a 1.5 - s dynamic characteristic in...8a 10a 12a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc 2...
Description IGBTs & DuoPacks - 2A 600V TO 262 SMD IGBT

File Size 324.52K  /  13 Page

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    MTC3504BJ4

Cystech Electonics Corp.
Part No. MTC3504BJ4
OCR Text ...=7V, ID=8a nC ID=15A, VDS=20v, VGS=10V VDS=10V, ID=1A, VGS=10V, RG=6 ns pF VGS=0V, VDS=20v, f=1MHz A V IF=IS, VGS=0V Note : *1.Pulse Test : Pulse Width 300s, Duty Cycle2% *2.Pulse width limited by maximum junction tempe...
Description N & P-Channel Enhancement Mode Power MOSFET

File Size 243.23K  /  11 Page

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    FS16UM-10

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS16UM-10
OCR Text ... CHARACTERISTICS (TYPICAL) VGS =20v 10V 6V PD = 150W TC = 25C Pulse Test 5.5V TC = 25C Single Pulse CASE TEMPERATURE TC (C) OUTPUT CHA...8a ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test 0.8 DRAIN-SOURCE ON-STATE ...
Description HIGH-SPEED SWITCHING USE

File Size 42.13K  /  4 Page

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    SPN04N60S5 SPN04N60S505

Infineon Technologies AG
Part No. SPN04N60S5 SPN04N60S505
OCR Text ... leakage current IGSS VGS=20v, VDS=0V VGS=10V, ID=2.8a, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.2 Page 2 2005-02-21 SPN04N60S5 Electrical Cha...
Description New revolutionary high voltage technology Worldwide best RDS in SOT 223

File Size 515.40K  /  10 Page

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    IRFRU9310 IRFU9310 IRFR9310

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFRU9310 IRFU9310 IRFR9310
OCR Text ... VGS = 0V, TJ = 125C 100 V GS = 20v nA -100 VGS = -20v 13 ID = -1.1A 3.2 nC VDS = -320v 5.0 VGS = -10V, See Fig. 6 and 13 --- VDD = -200V -...8a. (See Figure 12) ISD -1.1A, di/dt 450A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty ...
Description -400V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8a) 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 7.0ohm,身份证\u003d- 1.8a

File Size 110.22K  /  10 Page

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