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  20v Datasheet PDF File

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    MCL4148

Daesan Electronics Corp.
Part No. MCL4148
OCR Text ...oltage Leakage current at VR=20v at VR=75V at VR=20v, TJ=150E Junction Capacitance at VR=VF=0V Voltage rise when switching ON tested with 50mA pulse tp=0.1i S, Rise time<30i S, fp=5 to 100KHz Reverse Recovery time from IF=10mA to IR=1...
Description SMALL SIGNAL SWITCHING DIODES

File Size 489.95K  /  3 Page

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    MIC38HC42YM MIC38HC42YN MIC38HC44YM MIC38HC44YN MIC38HC43YM MIC38HC43YN MIC38HC42-1YM MIC38HC44-1YM MIC38HC45-1YM MIC38H

Micrel Semiconductor
Part No. MIC38HC42YM MIC38HC42YN MIC38HC44YM MIC38HC44YN MIC38HC43YM MIC38HC43YN MIC38HC42-1YM MIC38HC44-1YM MIC38HC45-1YM MIC38HC43-1YM MIC38HC43 MIC38HC44 MIC38HC42-1BM MIC38HC42BN MIC38HC43BM MIC38HC42BM MIC38HC43-1BM MIC38HC44-1BM MIC38HC44-1BN
OCR Text ....6V. All versions operate up to 20v. When compared to bipolar UC384x devices operating from a 15V supply, start-up current has been reduced to 50A typical and operating current has been reduced to 4.0 mA typical. Decreased output rise and f...
Description    BiCMOS 1A Current-Mode PWM Controllers

File Size 77.09K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ... 55V, VGS = 0V, TJ = 125C VGS = 20v VGS = -20v ID = 75A VDS = 44V VGS = 10V VDD = 28V ID = 75A RG = 6.8 VGS = 10V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 93 ID = 60A 29 nC VDS = 32V 30 VGS = 10V, See Fig. 6 and 13 --- VDD = 20v --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package ---...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...llowed up to Tjmax G VDSS = 20v RDS(on) = 4.0m S ID = 174A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achieve ...
Description Power MOSFET(Vdss=20v, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20v, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20v, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20v/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...e Allowed up to Tjmax VDSS = 20v G S RDS(on) = 4.0m ID = 180A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achiev...
Description Power MOSFET(Vdss=20v, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20v, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20v, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20v/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ...mal Resistance Junction to Case 20v 11A 7A 44A 45W 0.36W/C -55 to 150C 2.8C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/00 IRF1...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... VGS = 0V, TJ = 150C 100 V GS = 20v nA -100 VGS = -20v 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- nH and center of die contact --- VG...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package ---...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 110 ID = 25A 18 nC VDS = 80V 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 25A ns --- RG = 9.1 --- RD = 2.0, See Fig. 10 Between lead, --- 6mm (0.25in.) nH from package --- and...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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