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				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...screw Max. 140V 97V 550 330 2.2 20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sin...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF4905L) is available for lowprofile...175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...apacitance Min. -55 --- --- -2.0 21 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.05 --- --- --- --- ---...175 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperatu...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile...175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...apacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- -...175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	... = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ...175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temperature Range M...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...RIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELA...175 175 ( 1) ISD 16 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V 11 7.8 64 40 0.27 200...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTE...175 175 Unit V V V A A A W W/ o C V o C o C (*) Pulse width limited by safe operating area Mar...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profil...175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...aded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITI...175 UNIT V V V A A A W C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

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